Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process

标题
Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process
作者
关键词
-
出版物
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume -, Issue -, Pages 1-12
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2018-06-22
DOI
10.1109/jmems.2018.2843722

向作者/读者发起求助以获取更多资源

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now