期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 47, 期 10, 页码 5863-5869出版社
SPRINGER
DOI: 10.1007/s11664-018-6473-5
关键词
Zinc oxide; nanowire; reduced graphene oxide; sol-gel; UV-assisted reduction; thin film
A homogeneous dispersion of graphene oxide (GO) and zinc acetate was dip-coated and subsequently photo-annealed by deep UV irradiation to form ZnO-rGO (DUV) nanocomposite thin film. ZnO nanowires were then grown by wet-chemical synthesis on the ZnO-rGO (DUV) thin film. For comparison, ZnO nanowires were also grown on bare ZnO and ZnO-rGO (HT) thin films thermally annealed at 500 degrees C. X-ray diffraction and Raman spectroscopy of ZnO-rGO (DUV) thin film revealed crystallization of ZnO and reduction of GO. The photoluminescence spectra of ZnO nanowires grown on ZnO-rGO (DUV) thin film showed high crystallinity The current-voltage characteristics of ZnO nanowires grown on ZnO-rGO (DUV) thin film in dark and under UV showed a 15-fold increase in photocurrent as compared to ZnO nanowires grown on ZnO and ZnO-rGO (HT) thin films. The low-temperature photo-activated ZnO-rGO thin films can be used as a template to grow one-dimensional ZnO nanowires with improved structural and optical properties and can pave the way for high-performance flexible device fabrication.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据