Growth of N-polar GaN by ammonia molecular beam epitaxy

标题
Growth of N-polar GaN by ammonia molecular beam epitaxy
作者
关键词
-
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 481, Issue -, Pages 65-70
出版商
Elsevier BV
发表日期
2017-10-28
DOI
10.1016/j.jcrysgro.2017.10.033

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