期刊
JOURNAL OF APPLIED PHYSICS
卷 123, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5025710
关键词
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资金
- National Science Foundation [DMR-1507810]
- Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF) [NNCI-1542205]
- MRSEC program (NSF) at the Materials Research Center [DMR-1121262]
- International Institute for Nanotechnology (IIN)
- Keck Foundation
- State of Illinois, through the IIN
- Materials Research Science and Engineering Center (NSF) [DMR-1121262]
- State of Illinois
- Northwestern University
- Department of Defense through the National Defense Science and Engineering Fellowship (NDSEG) Program
- Ryan Fellowship
- IIN
The advent of two-dimensional materials and van der Waals (vdW) heterostructures has been a boon for the nanoscience community, enabling the fabrication of nanostructures with atomic-scale precision, resulting in high performance opto-electronic devices. Yet, while vdW heterostructures have been widely studied, their fabrication remains rudimentary, relying upon physical stacking and ad hoc collections of recipes, rather than a rational framework. Here, we report our work on the synthesis of vdW heterostructures and monolayer alloys of MoS2-WS2 and MoSe2-WSe2 and the creation of a unifying, diagrammatic approach to heterostructure growth in these materials systems, which we call Time-Temperature-Architecture (TTA) diagrams. We demonstrate the temperature tunable synthesis of in-plane, vertical, and hybrid heterostructures, as well as monolayer alloys within the MoS2-WS2 and MoSe2-WSe2 systems. We use the TTA framework to add previously unexplored entries to this collection: the first ever single-step growth of MoSe2-WSe2 vertical heterostructures and Mo1-xWxSe2 alloys, and a new MoS2-WS2 hybrid architecture that combines the morphologies of both vertical and in-plane heterostructures. The TTA diagrams are a simple framework for vdW heterostructure and alloy growth, which we believe will be crucial, and enable further work on heterostructures and alloys of MoS2-WS2 and MoSe2-WSe2. Published by AIP Publishing.
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