Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Lateral damage in graphene carved by high energy focused gallium ion beams

(2015) Zhongquan Liao et al.   APPLIED PHYSICS LETTERS

A Study of Gallium FIB induced Silicon Amorphization using TEM, APT and BCA Simulation

(2015) Jin Huang et al.   MICROSCOPY AND MICROANALYSIS

Comparison of silicon and 4H silicon carbide patterning using focused ion beams

(2015) S.K.P. Veerapandian et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy

(2012) Maximilian Rumler et al.   JOURNAL OF APPLIED PHYSICS

Focused ion beam milling of exfoliated graphene for prototyping of electronic devices

(2012) Marek E. Schmidt et al.   MICROELECTRONIC ENGINEERING

Experimental observation of FIB induced lateral damage on silicon samples

(2009) G. Spoldi et al.   MICROELECTRONIC ENGINEERING

Trench formation and lateral damage induced by gallium milling of silicon

(2008) Michael F. Russo et al.   APPLIED SURFACE SCIENCE