Structure, electronic properties, and oxygen incorporation/diffusion characteristics of the Σ 5 TiN(310)[001] tilt grain boundary

Point defects at the Σ5(012)[100] grain boundary in TiN and the early stages of Cu diffusion: An ab initio study

(2018) Maxim N. Popov et al.   ACTA MATERIALIA

Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices

(2017) Jonathan J. Bean et al.   Scientific Reports

Origin of differences in the excess volume of copper and nickel grain boundaries

(2016) Jonathan J. Bean et al.   ACTA MATERIALIA

Influence of pressure on dislocation, disclination, and generalized-disclination structures of a {310}/[001] tilt grain boundary in MgO

(2016) Xiao-Yu Sun et al.   JOURNAL OF MATERIALS RESEARCH

Nanostructured titanium nitride as a novel cathode for high performance lithium/dissolved polysulfide batteries

(2016) Negar Mosavati et al.   JOURNAL OF POWER SOURCES

Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

(2016) Wonjoo Kim et al.   Nanoscale

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Core structure and Peierls stress of edge and screw dislocations in TiN: A density functional theory study

(2014) S.K. Yadav et al.   ACTA MATERIALIA

Materials selection for oxide-based resistive random access memories

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Grain Boundary Controlled Electron Mobility in Polycrystalline Titanium Dioxide

(2014) Suzanne K. Wallace et al.   Advanced Materials Interfaces

The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devices

(2013) Samuel R. Bradley et al.   MICROELECTRONIC ENGINEERING

First-principles study of rare gas incorporation in titanium nitride

(2013) R. Bès et al.   PHYSICAL REVIEW B

On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films

(2012) H. Van Bui et al.   APPLIED SURFACE SCIENCE

Titanium nitride as a plasmonic material for visible and near-infrared wavelengths

(2012) Gururaj V. Naik et al.   Optical Materials Express

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Grain boundary mediated leakage current in polycrystalline HfO2 films

(2011) K. McKenna et al.   MICROELECTRONIC ENGINEERING

A comparative study of titanium nitride (TiN), titanium oxy nitride (TiON) and titanium aluminum nitride (TiAlN), as surface coatings for bio implants

(2011) B. Subramanian et al.   SURFACE & COATINGS TECHNOLOGY

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

(2009) Keith McKenna et al.   APPLIED PHYSICS LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

First-principles calculations of defects near a grain boundary in MgO

(2009) K. P. McKenna et al.   PHYSICAL REVIEW B

Origin of the Asymmetry in the Magnitude of the Statistical Variability of n- and p-Channel Poly-Si Gate Bulk MOSFETs

(2008) A. Asenov et al.   IEEE ELECTRON DEVICE LETTERS

Optimization methods for finding minimum energy paths

(2008) Daniel Sheppard et al.   JOURNAL OF CHEMICAL PHYSICS

Electron-trapping polycrystalline materials with negative electron affinity

(2008) Keith P. McKenna et al.   NATURE MATERIALS

Atomic, electronic and thermodynamic properties of cubic and orthorhombic LaMnO3 surfaces

(2008) Yu.A. Mastrikov et al.   SURFACE SCIENCE