Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals

Defect-Resistant Radiative Performance ofm-Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters

(2016) Shigefusa F. Chichibu et al.   ADVANCED MATERIALS

Hexagonal boron nitride is an indirect bandgap semiconductor

(2016) G. Cassabois et al.   Nature Photonics

Phonon symmetries in hexagonal boron nitride probed by incoherent light emission

(2016) T Q P Vuong et al.   2D Materials

Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy

(2015) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Carrier dynamics and related electronic band properties of InN films

(2014) Yoshihiro Ishitani   JAPANESE JOURNAL OF APPLIED PHYSICS

Excitonic recombinations inh−BN: From bulk to exfoliated layers

(2014) A. Pierret et al.   PHYSICAL REVIEW B

Nanometric Resolved Luminescence in h-BN Flakes: Excitons and Stacking Order

(2014) Romain Bourrellier et al.   ACS Photonics

Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun

(2013) K. Furusawa et al.   APPLIED PHYSICS LETTERS

Two-dimensional excitons in three-dimensional hexagonal boron nitride

(2013) X. K. Cao et al.   APPLIED PHYSICS LETTERS

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

(2013) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

On the origin of the 265 nm absorption band in AlN bulk crystals

(2012) Ramón Collazo et al.   APPLIED PHYSICS LETTERS

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

(2012) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Hexagonal boron nitride as a new ultraviolet luminescent material and its application—Fluorescence properties of hBN single-crystal powder

(2011) Kenji Watanabe et al.   DIAMOND AND RELATED MATERIALS

Hexagonal Boron Nitride as a New Ultraviolet Luminescent Material and Its Application

(2011) Kenji Watanabe et al.   International Journal of Applied Ceramic Technology

Coupling of excitons and defect states in boron-nitride nanostructures

(2011) C. Attaccalite et al.   PHYSICAL REVIEW B

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

(2009) P. Corfdir et al.   APPLIED PHYSICS LETTERS

Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride

(2009) Kenji Watanabe et al.   Nature Photonics

Time-resolved photoluminescence in band-edge region of hexagonal boron nitride single crystals

(2008) Kenji Watanabe et al.   DIAMOND AND RELATED MATERIALS

Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy

(2008) D A Evans et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Near-band-edge recombinations in multiwalled boron nitride nanotubes: Cathodoluminescence and photoluminescence spectroscopy measurements

(2008) P. Jaffrennou et al.   PHYSICAL REVIEW B