Article
Engineering, Electrical & Electronic
Sudip K. Mazumder, Lars F. Voss, Karen M. Dowling, Adam Conway, David Hall, Robert J. Kaplar, Gregory W. Pickrell, Jack Flicker, Andrew T. Binder, Srabanti Chowdhury, Victor Veliadis, Fang Luo, Sameh Khalil, Thomas Aichinger, Sandeep R. Bahl, Matteo Meneghini, Alain B. Charles
Summary: This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. It begins with an introduction to electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices, followed by a brief explanation of ultrawide bandgap (UWBG) PSDs. Additionally, it discusses optically activated PSDs such as photoconductive semiconductor switches (PCSS) and optical bipolar PSDs, and concludes with an overview of PSD packaging and reliability considerations.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2023)
Article
Physics, Applied
Jueli Shi, Ziqian Sheng, Ling Zhu, Xiangyu Xu, Yun Gao, Dingliang Tang, Kelvin H. L. Zhang
Summary: Wide bandgap oxide semiconductors have attracted significant attention, but the lack of high mobility p-type oxide semiconductors has limited their applications. This study focuses on beta-TeO2 as a promising p-type oxide semiconductor. Through experimental and computational methods, the electronic structure of beta-TeO2 is investigated, revealing that its valence band is composed of hybridized Te 5s, Te 5p, and O 2p states, while its conduction band is dominated by unoccupied Te 5p states. The hybridization between Te 5s(2) and O 2p states helps to reduce localization in the valence band, leading to high hole mobility. The structural distortions of beta-TeO2 lattice contribute to the stability of the hybridized states. Overall, beta-TeO2 is a highly competitive material for next-generation opto-electronic devices due to its large bandgap, high hole mobility, two-dimensional structure, and excellent stability.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
N. S. Phan, W. Wei, B. Beaumont, N. Bouman, S. M. Clayton, S. A. Currie, T. M. Ito, J. C. Ramsey, G. M. Seidel
Summary: Results of a study on electrical breakdown in liquid helium using stainless steel electrodes were reported, revealing the breakdown field distribution and its correlation with breakdown probability and field strength. The analysis also explored the relationship between breakdown phenomenon and Fowler-Nordheim field emission, offering possibilities for extending the method to other noble liquids.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Kazeem Olabisi Odesanya, Tahsin Ahmed Mozaffor Onik, Roslina Ahmad, Andri Andriyana, S. Ramesh, Chou Yong Tan, Yew Hoong Wong
Summary: The study focused on the formation of Ho2O3 thin film on a SiC substrate by sputtering and thermal oxidation, evaluating the effects of thermal oxidation on the structural and electrical properties of the resulting Ho2O3 layers. The results showed that samples thermally oxidized at 900 degrees Celsius exhibited optimum electrical properties.
Article
Engineering, Electrical & Electronic
Xiufeng Li, Yunmeng Yang, Qiang Wang, Yuan Gao, Wei Zhang, Zhengdi Liu
Summary: The dispersion state of nanoparticles and the crosslinking process of polymers have effects on the properties of nanocomposite materials. In this study, the researchers investigated the effects of crosslinking behavior on the water-tree ageing characteristics of nanocomposite dielectrics at the molecular level. The results showed that crosslinking can reduce the initiation probability and length of water trees, thus improving the water-tree resistance of the nanocomposite materials.
Article
Physics, Multidisciplinary
Loubaba Attou, Ahmed Al-Shami, Jaber Boujemaa, Omar Mounkachi, Hamid Ez-Zahraouy
Summary: Undoped and B-doped CaTiO3 semiconductor perovskite have been investigated using Density Functional Theory (DFT) and Boltzmann transport theory. B doping effectively reduces the electrical band gap and enhances visible light absorption ability. All doped structures show high absorbance and productive optical transition energy between 2 and 4 eV. Temperature-dependent transport characteristics favor undoped CaTiO3 at room temperature and B-doped CaTiO3 at elevated temperatures.
Review
Chemistry, Multidisciplinary
Jiandong Hao, Ling Li, Peng Gao, Xiangqian Jiang, Chuncheng Ban, Ningqiang Shi
Summary: This paper provides a comprehensive summary of the nanostructures, self-powered technologies, flexible substrates, electrical characteristics, and simulation optimization of wide bandgap semiconductors, based on recent studies. The working principle, application, optimization, and technical difficulties of DUV detectors are also discussed.
JOURNAL OF NANOPARTICLE RESEARCH
(2023)
Article
Chemistry, Physical
Chien-Yie Tsay, Shih-Ting Chen, Hsuan-Meng Tsai
Summary: In this study, Ga-doped Mg0.2Zn0.8O (GMZO) transparent semiconductor thin films were prepared using sol-gel and spin-coating deposition technique, and the effects of Ga doping on the microstructural features, optical parameters, and electrical characteristics of the thin films were investigated.
Article
Physics, Multidisciplinary
Syed Awais Rouf, Muhammad Iqbal Hussain, Umair Mumtaz, Hafiz Tariq Masood, Hind Albalawi, Abdul Mannan Majeed, R. M. Arif Khalil, Q. Mahmood
Summary: The electronic and optoelectronic properties of RhXO3 (X = Ga, Ag) perovskites were studied using ab-initio computations. It was found that RhGaO3 has a band gap, while RhAgO3 exhibits metallic nature. The analysis of sub-TDOS and optical properties showed that RhGaO3 is a promising material for optoelectronics, while RhAgO3 is metallic.
Article
Biochemistry & Molecular Biology
Vijayakumar Raja, S. R. Priyadarshini, J. A. Moses, C. Anandharamakrishnan
Summary: A bolus-oriented artificial oral mastication system was developed and validated with in vivo trials to simulate the dynamics of food mastication in the human mouth. The study analyzed the time-dependent changes in particle size, texture, and rheological behavior of food during mastication.
Article
Chemistry, Physical
Cecilia Guillen, Juan Francisco Trigo
Summary: Spectroscopic ellipsometry is a powerful technique for evaluating the optical and electrical uniformity of large area Al-doped ZnO films. Compared to other optical and electrical methods, ellipsometry provides more accurate data on visible transmittance and sheet resistance.
Article
Chemistry, Multidisciplinary
Ye Liu, Qiuzhi Song, Pengwan Chen, Kun Huang, Yixun Yang
Summary: This study investigates the corrosion performance of coatings prepared by electrical explosion spraying of metal wires. A 316L metal wire with a diameter of 1.5 mm is used as spray material, and the coating is prepared on the 45(#) steel substrate by electrical explosion spraying. The corrosion experiment of the coating is conducted in a constant temperature water bath at 60℃ for 168 h. The results show the presence of metal oxides inside the coating, mainly distributed at the grain boundaries. The corrosion rate of the coating is measured to be 0.079 mm/annum by weight loss method. XRD results reveal the formation of CaCO3, Fe3O4, and MgFe2O4 as corrosion products. Coating corrosion is mainly caused by electrochemical corrosion between oxides and non-oxides, as well as pitting and intergranular corrosion in the presence of chloride ions.
NANOTECHNOLOGY REVIEWS
(2023)
Article
Materials Science, Multidisciplinary
Guoliang Zhao, Junhai Wang, Yuanyuan Deng, Tingting Yan, Wenfeng Liang, Ting Li, Lixiu Zhang, Qianzhong Jia, Ye Wan
Summary: The TiB2/Cr multilayer coatings deposited on 304 stainless steel substrates were carefully studied for mechanical properties and wide-temperature tribological performances. The results showed that the coatings exhibited good mechanical properties and improved tribological performances in the temperature range of 25 degrees C-400 degrees C.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2022)
Article
Engineering, Electrical & Electronic
Tao Gong, Si Chen, Kai Li, Guoyuan Li, Zhizhe Wang, Xiaofeng Yang, Xiaodong Jian, Zhiwei Fu
Summary: This study investigates the electrical breakdown failure modes and mechanisms of TSV-RDL structures through experiments and finite element simulation analysis, revealing the impact of structural parameters on the electrical breakdown failure modes and the shift in failure locations under different structures.
MICROELECTRONICS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Syed Awais Rouf, Muhammad Iqbal Hussain, Umair Mumtaz, Abdul Mannan Majeed, Hafiz Tariq Masood
Summary: An ab initio study using density functional theory (DFT) was conducted to explore the structural, electronic, and optical properties of vanadium gallate (VGaO3) and niobium gallate (NbGaO3). The results indicate that NbGaO3 exhibits better properties than VGaO3 for optoelectronic applications.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Haizhong Zhang, Xin Ju, Kwang Sing Yew, Ding Shenp Ang
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Engineering, Electrical & Electronic
Dayanand Kumar, Pranav Sairam Kalaga, Diing Shenp Ang
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Dan Berco, Diing S. Ang
Summary: Research on photoelectric memristors has been growing in recent years. Opto-electronic structures are advantageous in extending device functionality and coupling light and electrical signals in neuromorphic systems. This study presents a detailed analysis of a transparent, bilayer synaptic device with hybrid photonic and electronic response, showcasing its potential in artificial vision systems.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2021)
Article
Engineering, Electrical & Electronic
Xin Ju, Diing Shenp Ang
Summary: High-k gated n-MOSFET can exhibit the memory plasticity of a synapse and the leaky-integration of a neuron through the temporal dynamics of charge capture/emission by gate-oxide defects. It also demonstrates a tunable leaky-integrate function. The research opens up possibilities for low-power trigger circuit design and scalability.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Haider Abbas, Asif Ali, Jiayi Li, Thaw Tint Te Tun, Diing Shenp Ang
Summary: This work demonstrates resistive switching characteristics in conductive bridge RAM devices based on transition-metal chalcogenides, which are forming-free and self-limited. By using a suitable solid electrolyte, the proposed WTe2-based devices show excellent switching characteristics, including high pulse endurance (> 2 x 10(7) cycles) and stable data retention (10 years at 72 degrees C). The devices also exhibit good device-to-device and cycle-to-cycle uniformity, making them suitable for practical implementation in large crossbar arrays.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
Asif Ali, Haider Abbas, Jiayi Li, Diing Shenp Ang
Summary: A double stacked monochalcogenide GeS-based CBRAM device with an IGZO buffer layer shows significantly improved resistive memory characteristics. The IGZO/GeS double layer provides the CBRAM with a sub-1V DC set/reset-voltage distributions (<+/- 0.1V variation). High endurance (>10(7) cycles) and retention (>10(5) s at 85 degrees C) performance are achieved. Understanding the RS mechanism based on the materials' properties and tailoring the device structure allow optimal control over variability, offering a facile means for mitigating CBRAM variability.
APPLIED PHYSICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Yinghao Xu, Renli Chen, Shenlong Jiang, Lu Zhou, Tao Jiang, Chenjie Gu, Diing Shenp Ang, Lucia Petti, Qun Zhang, Xiang Shen, Jiaguang Han, Jun Zhou
Summary: The chemical enhancement of semiconducting oxides significantly improves surface-enhanced Raman scattering (SERS), providing a potential approach for high uniformity and low-cost SERS substrates. However, the understanding of factors influencing the charge transfer process is still insufficient. In this study, the important role of defect-induced band offset and electron lifetime change in SERS evolution observed in a MoO3 oxide semiconductor is revealed.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Automation & Control Systems
Dan Berco, Chih-Hao Chiu, Diing Shenp Ang
Summary: This article presents an independent bioinspired robotic vision system with an incremental learning ability. The system is trained and operated by associating instructions with hieroglyphic symbols, and the entire range of functionality is demonstrated.
ADVANCED INTELLIGENT SYSTEMS
(2022)
Article
Automation & Control Systems
Dan Berco, Diing Shenp Ang
Summary: This study introduces a bioinspired robotic vision system with inherent rotation-invariant properties, which can be taught offline or in real time through feedback of error indications, and successfully trained to counter the moves of a human player in a game of Paper Scissors Stone. The architecture and operation principles are discussed, along with performance analysis of pattern recognition under misaligned and rotated conditions, followed by a demonstration and analysis of online, supervised learning process.
ADVANCED INTELLIGENT SYSTEMS
(2021)
Article
Engineering, Electrical & Electronic
Xin Ju, Diing Shenp Ang, Chenjie Gu
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Computer Science, Information Systems
Pranav Sairam Kalaga, Dayanand Kumar, Diing Shenp Ang, Zviad Tsakadze
Article
Automation & Control Systems
Dan Berco, Diing Shenp Ang, Hai Zhong Zhang
ADVANCED INTELLIGENT SYSTEMS
(2020)
Article
Computer Science, Information Systems
Xin Ju, Diing Shenp Ang