期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 749, 期 -, 页码 734-740出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.03.327
关键词
Anomalous photoconductivity; Defect levels; Potential fluctuations; Metal-insulator transition
资金
- CAPES
- CNPq
- FAPEMIG [APQ-00623-14]
- FAPESP [2016/10973-4]
Photoconductivity investigation is performed on Zn1-xCdxO films and a transition from positive to negative photoconductivity is observed at room temperature as Cd concentration x is varied. Low and high Cd-content samples are studied by temperature dependent photoconductivity measurements in the temperature range of 77-300 K. Our results exhibited additional transitions manifested by an anomalous persistent effect on sample with x similar to 0.25 and a transition from negative to positive photoconductivity for sample with x similar to 0.75 as temperature changes. The observed negative photoconductivity effect is attributed to trap levels while the anomalous behavior of persistent photoconductivity amplitude is caused by random local potential fluctuations, responsible to spatial separation of electrons and holes at high temperatures. This interpretation is further supported by photoluminescence and electrical resistance measurements. (C) 2018 Elsevier B.V. All rights reserved.
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