期刊
IET POWER ELECTRONICS
卷 11, 期 4, 页码 681-688出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-pel.2017.0397
关键词
monolithic integrated circuits; power HEMT; semiconductor diodes; printed circuits; power convertors; monolithically integrated power circuits; high-voltage GaN-on-Si heterojunction technology; high heterojunction transition slew rates; integrated gate driver; highly linear temperature sensor; high-electron-mobility transistor; HEMT power device; area-efficient HEMT structure; integrated freewheeling diodes; monolithic multilevel converter chip; half-bridge chip; advanced printed circuit board embedding technology; inverter operation; synchronous buck converter; voltage 600 V; voltage 400 V to 200 V; voltage 120 V; resistance 53 mohm
资金
- German Federal Ministry for Environment, Nature Conservation, Building and Nuclear Safety (BMU) [0325529]
- German Federal Ministry of Education and Research (BMBF) [16ES0076K, 16EMO215K]
This study presents monolithically integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition slew rates are demonstrated by means of a monolithic power circuit with integrated gate driver. A highly linear temperature sensor is integrated in a GaN-high-electron-mobility transistor (HEMT) power device for the 600V class and on-state resistance of 53m. An area-efficient HEMT structure with integrated freewheeling diodes is presented. This structure is applied in a monolithic multilevel converter chip, as well as in a 600V class half-bridge chip. The multilevel chip is integrated by an advanced printed circuit board embedding technology and tested in inverter operation with a mains voltage output of 120V(RMS). The performance of the half-bridge is demonstrated in a synchronous buck converter operation from 400 to 200V and with a switching frequency of 3MHz.
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