Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume 65, Issue 1, Pages 164-174

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-10-07

DOI

10.1109/tns.2017.2760629

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