期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 7, 页码 2838-2843出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2834506
关键词
Inverter; solution process; stability; thin-film transistors (TFTs)
资金
- Natural Science Foundation of China [61774100, 61674101]
- Shanghai Science and Technology Commission [15JC1402000]
- National Science Foundation for Distinguished Young Scholars of China [51725505]
- National Key Research and Development Program of China [2016YFB0401105]
In this paper, high-gain hybrid complementary inverter was first designed and fabricated by coupling cosputtered ZnSiSnO and solution-processed semiconducting single-walled carbon nanotubes (SWCNTs). Field-effect transistors with ZnSiSnO and SWCNT networks show high electrical performance and acceptable bias stability. ZnSiSnO thin-film transistor shows field-effect mobility of 11.6 cm(2)/V.s, threshold voltage of 0.98 V, and subthreshold swing of 0.18 V/decade. The corresponding values for the SWCNT transistor are 10.2 cm(2)/V.s, 0.59 V, and 0.21 V/decade, respectively. The ZnSiSnO/SWCNT inverter shows excellent performance with a voltage gain of 41.5, a high noise margin of 2.62 V, and a low noise margin of 1.86 V at a small V-DD of 5 V. The peak consumption is only 3.2 x 10(-8) Wat V-DD = 5 V. Our finding underscores the coupling of cosputtered ZnSiSnO and solution-processed semiconducting SWCNT as an alternative strategy to the high-performance inverter development and has the potential for widespread technological applications.
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