4.6 Article

Solution-Processed Single-Crystal Array for High-Performance Conformable Transistors

期刊

IEEE ELECTRON DEVICE LETTERS
卷 39, 期 4, 页码 595-598

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2810101

关键词

Conformable transistors; drop casting; TIPS-PEN single-crystal array; cross-linked poly(vinyl alcohol); trichloro(phenyl)silane modification

资金

  1. NSFC [51322305, 61574032, 61376074, 91233204]
  2. 111 Project [B13013]

向作者/读者索取更多资源

Currently, almost all reported conformable organic field-effect transistors (OFETs) are based on semiconductor thin film, and most of them applied the vapor deposition method. Here, based on an inclined drop-casting method, we have successfully obtained high-quality 6,13-bis(triisopropylsilylethynyl) pentacene single-crystal transistor array on the trichloro(phenyl) silane modified anti-solvent cross-linked poly(vinyl alcohol) dielectric layer. The resulting OFET array presents an excellent electrical performance with the mobility as high as 2.22 cm(2) V-1 s(-1). In addition, after peeling off the whole device array directly from the substrate in an all-dry process, the device array can well conformto different shaped objects and shows the highest mobility of 0.87 cm(2) V-1 s(-1) on an artificial finger nail. All of these results demonstrate great application potential of solution-processed conformable OFETs in next-generation smart electronics.

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