Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si(111) substrate

Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface

(2018) Liegen Huang et al.   APPLIED SURFACE SCIENCE

Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates

(2017) Chih-Hsien Cheng et al.   Journal of Materials Chemistry C

Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal–organic vapour phase epitaxy

(2016) T. Szymański et al.   CRYSTENGCOMM

Epitaxial growth of high quality AlN films on Si substrates

(2016) Meijuan Yang et al.   MATERIALS LETTERS

Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures

(2016) Wei-Ching Huang et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy

(2016) Sh. Sh. Sharofidinov et al.   SEMICONDUCTORS

Negative differential resistance in the I–V curves of Al2O3/AlGaN/GaN MIS structures

(2016) Lingyan Shen et al.   RSC Advances

Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy

(2016) Xue-Hua Liu et al.   Materials Express

Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique

(2015) X. Zhang et al.   CRYSTENGCOMM

Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue ® MOCVD platform

(2015) Qilong Bao et al.   JOURNAL OF CRYSTAL GROWTH

Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

(2014) Tzu Yu Wang et al.   CRYSTENGCOMM

Competitive growth mechanisms of AlN on Si (111) by MOVPE

(2014) Yuxia Feng et al.   Scientific Reports

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

(2013) Junlin Liu et al.   CRYSTENGCOMM

Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD

(2013) S. J. Bak et al.   Electronic Materials Letters

Prospects of III-nitride optoelectronics grown on Si

(2013) D Zhu et al.   REPORTS ON PROGRESS IN PHYSICS

Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate

(2013) Qilong Bao et al.   VACUUM

Structure and chemistry of the Si(111)/AlN interface

(2012) G. Radtke et al.   APPLIED PHYSICS LETTERS

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

(2010) G. Radtke et al.   APPLIED PHYSICS LETTERS

Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE

(2010) Mahesh Kumar et al.   MATERIALS RESEARCH BULLETIN

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS