Review
Chemistry, Inorganic & Nuclear
Yanglizhi Li, Luzhao Sun, Haiyang Liu, Yuechen Wang, Zhongfan Liu
Summary: Single-crystal metals are an ideal substrate for the epitaxial growth of 2D materials, but obtaining large single-crystal metals is challenging. This review summarizes recent progress towards achieving large-area single-crystal metals and highlights the crucial roles of single-crystal metal substrates in controlling the growth of 2D materials.
INORGANIC CHEMISTRY FRONTIERS
(2021)
Article
Materials Science, Multidisciplinary
Nilanjan Basu, Alapan Dutta, Ranveer Singh, Md. Bayazeed, Avanish S. Parmar, Tapobrata Som, Jayeeta Lahiri
Summary: This study demonstrates the synthesis of boron nitride films on copper foils using reactive radio-frequency magnetron sputtering. The surface roughness and orientation of the copper foil play a crucial role in determining the growth and phase selectivity of the BN films.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
Nermina Brljak, Ruitao Jin, Tiffany R. Walsh, Marc R. Knecht
Summary: The study identified a peptide sequence with affinity for h-BN, called BP7, and developed a new method to manipulate the surface properties of nanosheet materials through mutation studies and bio-conjugation. When conjugated with a fatty acid, BP7 was able to create highly viscoelastic interfaces, offering a new pathway for organizing and conjugating h-BN nanosheets in liquid water.
Article
Materials Science, Multidisciplinary
Zelun Li, Xiaotong Zhao, Xuekun Hong, Hujiang Yang, Dongyu Fang, Yonggang Wang, Ming Lei
Summary: Research has shown that hexagonal boron nitride nanoribbons have efficient adsorption performance, making them a potential alternative to activated carbons for capturing organic micropollutants in wastewater.
Article
Chemistry, Multidisciplinary
Tangyou Sun, Jie Tu, Zhiping Zhou, Rong Sun, Xiaowen Zhang, Haiou Li, Zhimou Xu, Ying Peng, Xingpeng Liu, Peihua Wangyang, Zhongchang Wang
Summary: The study proposes a liquid-phase self-assembly (LPSA) method to fabricate stacked hexagonal boron nitride (h-BN) polycrystal film and demonstrates its resistive switching behavior. Resistive switching behaviors are observed in devices with different electrode structures, and the proposed method offers a convenient and low-cost way to fabricate memory materials on arbitrary substrates. Stacked polycrystal film facilitates the study of nonvolatile resistive switching and opens up potential avenues for numerous functional applications.
CELL REPORTS PHYSICAL SCIENCE
(2022)
Article
Physics, Applied
Hongseok Oh, Youngbin Tchoe, Heehun Kim, Jiyoung Yun, Mingi Park, Seongjun Kim, Young-Soo Lim, Hanjoon Kim, Woosung Jang, Jaeyong Hwang, Yeda Song, Juntae Koh, Gyu-Chul Yi
Summary: The study reports the growth of large-scale, single-oriented ZnO nanowall networks on epitaxial h-BN films and their application in flexible inorganic UV light sensors, achieving better performance with high I-UV/I-dark ratio, faster recovery time, and low dark current. The ZnO/h-BN heterostructures show excellent performance even under highly bent conditions, showcasing potential in flexible optoelectronic device applications.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
Jichen Dong, Yunqi Liu, Feng Ding
Summary: This study provides a comprehensive investigation on the formation mechanisms of various 2D polycrystals, revealing that the structures depend on the symmetries of both the 2D material and the substrate. Four libraries of 2D polycrystals are built, which are consistent with experimental observations and can guide the experimental synthesis of different 2D polycrystals.
NPJ COMPUTATIONAL MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Shaohua Chen, Chenyuan Zhu, Haoyang Gu, Li Wang, Jiajie Qi, Lixiang Zhong, Zhibin Zhang, Chunlei Yang, Guoshuai Shi, Siwen Zhao, Shuzhou Li, Kaihui Liu, Liming Zhang
Summary: The study successfully improved the selectivity of CH4 and achieved efficient electrochemical conversion by designing the interface of monolayer hexagonal boron nitride/copper. Experimental and theoretical calculations both demonstrated that the h-BN/Cu interfacial perimeters provide specific chelating sites to accelerate the conversion of CO.
Article
Physics, Applied
Haohuan Wang, Zhengyong Huang, Jian Li, Feipeng Wang, Zhanzu Feng, Hai Tian, Haisen Zhao, Licheng Li
Summary: This study presents a simple method to prepare bioinspired nacre-like structured materials with high thermal conductivity by digital light processing 3D printing. It was found that a lower printing layer thickness leads to a higher orientation of platelets and greater thermal conductivity of the composites. High potential for thermal management applications in electronic devices and electric equipment is shown.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Composites
Zhenhang Yin, Jianhua Guo, Xinghua Jiang
Summary: The study found that both the content and average diameter of boron nitride have a significant impact on the thermal conductivity of silicone rubber composites. Aligned boron nitride can construct more efficient thermal conductive pathways, leading to higher thermal conductivity. Additionally, composites prepared using the roll-cutting method exhibited higher thermal conductivity compared to those prepared using the stacking-cutting method.
COMPOSITES SCIENCE AND TECHNOLOGY
(2021)
Article
Materials Science, Coatings & Films
Sachin Sharma, Laurent Souqui, Henrik Pedersen, Hans Hoegberg
Summary: This study explores the chemical vapor deposition (CVD) of sp(2)-BN thin films on various cuts of sapphire substrates. The growth of crystalline films is observed on Al2O3 ( 11 2 over bar 0) and Al2O3 (0001) substrates, and the films are found to be epitaxially grown on an AlN interlayer. These findings suggest that Al2O3 ( 11 2 over bar 0) is the most favorable substrate for the envisioned applications of r-BN films.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2022)
Article
Materials Science, Multidisciplinary
Jozsef Balint Renko, Peter Janos Szabo, Attila Bonyar
Summary: In this study, in situ optical microscopy investigation was performed on a Cu99.9 copper sample during color etching with Beraha-I etchant. The color change of individual grains was analyzed, and the luminance as a function of time was calculated and visualized. Crystallographic orientations of the grains were determined, and it was found that the resulting color heavily depended on the orientation and planar density of the grains. Additionally, a method to differentiate grains based on their planar density was proposed.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2023)
Article
Chemistry, Multidisciplinary
Ruitao Jin, Nermina Brljak, Robert Sangrigoli, Tiffany R. Walsh, Marc R. Knecht
Summary: By integrating different materials-binding domains and harnessing biological recognition, the designed BEAM molecule is capable of achieving regiospecific binding to graphene and h-BN surfaces, showing potential in guiding material self-organization in aqueous media.
Article
Nanoscience & Nanotechnology
Haichang Guo, Hongyu Niu, Haoyuan Zhao, Lei Kang, Yanjuan Ren, Ruicong Lv, Liucheng Ren, Muhammad Maqbool, Akbar Bashir, Shulin Bai
Summary: This study investigates the effects of different sized boron nitride sheets on the thermal conductivity of thermoplastic polyurethane composites produced through fused deposition modeling. The transformation from one-dimensional to two-dimensional alignment during the extrusion and stacking process is observed, and its impact on thermal conductivity in three directions is clarified. It is found that the composites with larger boron nitride sheets exhibit higher thermal conductivity at higher content, while the composites with smaller boron nitride sheets exhibit higher thermal conductivity at lower content. Finally, heat dissipation tests demonstrate the potential application of 3D printed boron nitride/thermoplastic polyurethane composites in thermal management.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Jingjing Wang, Ziyang Wang, Kunming Yang, Naiqi Chen, Jiamiao Ni, Jian Song, Quan Li, Fangyuan Sun, Yue Liu, Tongxiang Fan
Summary: Interfacial thermal resistance plays a critical role in heat dissipation. This study investigates the influence of interface defects on phonon scattering and finds that inelastic phonon scattering may greatly promote interfacial heat transport. The findings provide insights into nanoscale heat transport mechanisms at metal/nonmetal interfaces.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Physics, Applied
Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael A. Mastro, Neeraj Nepal, Jeffrey M. Woodward, Rachael L. Myers-Ward, Evan R. Glaser, Jaime A. Freitas, Alan G. Jacobs, James C. Gallagher, Alyssa L. Mock, Daniel J. Pennachio, Jenifer Hajzus, Mona Ebrish, Travis J. Anderson, Karl D. Hobart, Jennifer K. Hite, Charles R. Eddy Jr.
Summary: Gallium oxide as an ultra-wide bandgap semiconductor shows significant potential in advancing power electronic devices due to its high breakdown electric field and mature substrate technology. However, a key challenge remains in growing electronic-grade epitaxial layers at rates consistent with the thickness needed for high voltage technologies. This study reports on the characterization of epitaxial layers grown at relatively high rates, showing improved quality and potential for future high voltage power device technologies.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Physics, Applied
Minh Anh Phan Nguyen, Jennifer Hite, Michael A. Mastro, Mehran Kianinia, Milos Toth, Igor Aharonovich
Summary: This study investigates the nature of quantum emitters in GaN grown on samples with different growth orientations, revealing consistent formation of quantum emitters in Ga-polar regions. Findings shed light on the origins of these quantum emitters and demonstrate site-selective formation in GaN. Through various tests, the overall defectivity of Ga-polar GaN synthesized using a specific growth procedure is attributed to the formation of quantum emitters.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Coatings & Films
Michael A. Mastro, Charles R. Eddy, Marko J. Tadjer, Jennifer K. Hite, Jihyun Kim, Stephen J. Pearton
Summary: Recent advancements in bulk crystal growth of beta-Ga2O3 have led to commercialization of large-area substrates and high-quality films on (010) substrates, revealing subnanometer-scale facets and larger ridges on the surface. Recommendations for standardizing substrates to control ridge formation have been proposed based on density function theory calculations.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Engineering, Electrical & Electronic
James C. Gallagher, Travis J. Anderson, Andrew D. Koehler, Mona A. Ebrish, Geoffrey M. Foster, Michael A. Mastro, Jennifer K. Hite, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Francis J. Kub
Summary: This work focuses on fabricating vertical p-i-n GaN diodes using Raman spectroscopy to monitor carrier concentration, discovering that the uniformity of the wafers affects device performance. Avoiding electron-donating defects in the wafers significantly improves rectification ratio and reduces reverse bias leakage current.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Mona A. Ebrish, Travis J. Anderson, Alan G. Jacobs, James C. Gallagher, Jennifer K. Hite, Michael A. Mastro, Boris N. Feigelson, Yekan Wang, Michael Liao, Mark Goorsky, Karl D. Hobart
Summary: This research examines the optimal conditions for Mg ion implantation and activation, finding that in situ epitaxial-grown AlN caps are more suitable for GaN activation annealing, and a high dose is needed at the surface to facilitate ohmic contact formation. This work provides valuable information for achieving an electrical activation of implanted Mg while maintaining the integrity of the crystalline structure of GaN.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Coatings & Films
Clarence Y. Chan, Shunya Namiki, Jennifer K. Hite, Michael A. Mastro, Syed B. Qadri, Xiuling Li
Summary: Metal-assisted chemical etching is a plasma-free method that can produce high aspect ratio structures, with potential applications in electronic and optoelectronic devices. The method was successfully demonstrated with ordered micropillar arrays of homoepitaxial GaN, showing promising results in spatially resolved photoluminescence. This approach may also be extended to InGaN and AlGaN, offering a facile and scalable processing route for III-nitride based devices.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Instruments & Instrumentation
Md Shafkat Bin Hoque, Yee Rui Koh, Kiumars Aryana, Eric R. Hoglund, Jeffrey L. Braun, David H. Olson, John T. Gaskins, Habib Ahmad, Mirza Mohammad Mahbube Elahi, Jennifer K. Hite, Zayd C. Leseman, W. Alan Doolittle, Patrick E. Hopkins
Summary: This study investigates the thermal conductivity of buried substrates using the optical pump-probe technique SSTR, providing guidance for future measurements. The steady-state nature of SSTR allows it to measure the thermal properties of buried substrates that are traditionally challenging to measure with transient pump-probe techniques.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2021)
Article
Materials Science, Coatings & Films
Jeffrey M. Woodward, Samantha G. Rosenberg, David R. Boris, Michael J. Johnson, Scott G. Walton, Scooter D. Johnson, Zachary R. Robinson, Neeraj Nepal, Karl F. Ludwig Jr, Jennifer K. Hite, Charles R. Eddy Jr
Summary: Plasma-enhanced atomic layer deposition (PEALD) enables the epitaxial growth of ultrathin indium nitride (InN) films with reduced process temperatures and better control of layer thickness. The relationship between plasma properties and growth kinetics is crucial for optimizing growth parameters. In this study, in situ investigation using grazing incidence small-angle x-ray scattering (GISAXS) reveals that the production of nitrogen species in the plasma influences the growth mode, with high concentrations promoting island growth and low concentrations promoting layer-plus-island growth. The results demonstrate the potential to control the growth kinetics of epitaxial films during PEALD by manipulating specific plasma species generation regimes.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2022)
Article
Engineering, Electrical & Electronic
M. C. Sullivan, Zachary R. Robinson, Karsten Beckmann, Alex Powell, Ted Mburu, Katherine Pittman, Nathaniel Cady
Summary: The influence of sample growth and device characteristics on the stabilization of threshold switching characteristics of NbOx is examined. It is found that the smallest nanoscale devices exhibit large asymmetry in IV curves and a large threshold voltage, while larger devices and microscale devices show symmetric behavior. The resistance of the devices scales with the area, indicating a crystallized bulk NbO2 device. The annealed nanoscale devices exhibit similar electrical responses as electroformed microscale crossbar devices.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2022)
Article
Materials Science, Multidisciplinary
Alan G. Jacobs, Joseph A. Spencer, Jennifer K. Hite, Karl D. Hobart, Travis J. Anderson, Boris N. Feigelson
Summary: Codoping of gallium nitride with magnesium and silicon or oxygen via ion implantation and symmetric multicycle rapid thermal annealing is demonstrated. The results show enhanced photoluminescence, especially with oxygen codoping. The addition of nitrogen helps to balance stoichiometry and suppress defect photoluminescence signals. These findings have important implications for device design and the future use of ion implantation.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Review
Crystallography
Jennifer K. Hite
Summary: This paper reviews the basic issues in homoepitaxial growth of III-nitrides for vertical device technology. It focuses on using MOCVD to grow GaN and explores the effects of native substrate characteristics on material quality and device performance. The review also includes theoretical understanding of dopants in AlN and BN for future expansion into these materials.
Article
Crystallography
Alan G. G. Jacobs, Boris N. N. Feigelson, Joseph A. A. Spencer, Marko J. J. Tadjer, Jennifer K. K. Hite, Karl D. D. Hobart, Travis J. J. Anderson
Summary: Selective area doping is crucial for modern devices. In this study, efficient silicon ion activation in GaN was achieved through symmetrical multicycle rapid thermal annealing. The activation efficiency and mobility improved with increasing annealing temperature. The results demonstrate efficient dopant activation with low unintentional doping, making it suitable for high-voltage, high-power devices. Additionally, high activation and mobility have been achieved with GaN on sapphire, which offers commercial potential due to its large-area and robust substrates.
Article
Microscopy
Andrew J. Winchester, Travis J. Anderson, Jennifer K. Hite, Randolph E. Elmquist, Sujitra Pookpanratana
Summary: Photoemission electron microscopy (PEEM) is a powerful tool for studying electronic properties. Traditionally, it was mainly used with synchrotron light sources, but recent advancements in solid-state lasers have allowed for the development of laboratory-based PEEMs using laser-based UV light. This study reports on the characteristics of a laser-based UV light source integrated with a PEEM instrument and highlights the improved image quality compared to conventional light sources.
Proceedings Paper
Engineering, Electrical & Electronic
Clarence Y. Chan, Shunya Namiki, Jennifer K. Hite, Xiuling Li
Summary: In this study, photo-enhanced metal-assisted chemical etching was demonstrated on homoepitaxial n-UaN on HVPE GaN substrates. The etch rate achieved was comparable to or better than using RIE, with no degradation in band-edge emission observed.
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
(2021)