Article
Materials Science, Multidisciplinary
Teng Jiao, Zeming Li, Wei Chen, Xin Dong, Zhengda Li, Zhaoti Diao, Yuantao Zhang, Baolin Zhang
Summary: The use of silane as an n-type dopant for Si-doped beta-Ga2O3 films grown on (100) beta-Ga2O3 substrates via MOCVD allows for stable control of electron concentrations, with higher quality and lower defect density observed in homoepitaxial compared to heteroepitaxial films. Increasing doping concentration may adversely affect defect density and surface morphology of the films.
Article
Materials Science, Multidisciplinary
Junhee Lee, Honghyuk Kim, Lakshay Gautam, Manijeh Razeghi
Summary: A highly conductive gallium oxide doped with silicon and indium was grown on a c-plane sapphire substrate using MOCVD. The material exhibited high electron hall mobility and carrier concentration when doped with silicon, but was highly resistive without silicon doping. Indium was found to play a role in passivating electron trapping defect levels in the material.
Article
Physics, Applied
Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga, Sriram Krishnamoorthy, Bharat Jalan
Summary: By using high-field magnetotransport measurements, this study investigates donor state energy characteristics in Si-doped β-Ga2O3 films, revealing critical insights into impurity band conduction and defect energy levels in the material.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Ekaterine Chikoidze, Jacob Leach, Zeyu Chi, Jurgen von Bardeleben, Belen Ballesteros, Anne-Marie Goncalves, Tamar Tchelidze, Yves Dumont, Amador Perez-Tomas
Summary: This study reports the discovery of an exceptional p-type 2DHG surface on a Si-doped monoclinic (010) beta-Ga2O3 crystal. The free carriers at the surface are determined to be holes with a high concentration and mobility.
JOURNAL OF ALLOYS AND COMPOUNDS
(2024)
Article
Materials Science, Ceramics
Wei Chen, Teng Jiao, Zhaoti Diao, Zhengda Li, Peiran Chen, Xinming Dang, Xin Dong, Yuantao Zhang, Baolin Zhang
Summary: ss-Ga2O3 nanowire films were synthesized on Si(111) substrate by selective area growth (SAG) using metal-organic chemical vapor deposition (MOCVD). The effects of MOCVD process parameters on SAG were discussed by calculating Ga supersaturation. Transmission electron microscopy confirmed the preferential orientation of (002) crystal plane in ss-Ga2O3 nanowires. P-Si/ss-Ga2O3 nanowire heterojunctions were fabricated and exhibited high film resistance.
CERAMICS INTERNATIONAL
(2023)
Article
Nanoscience & Nanotechnology
Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena, David A. Muller
Summary: The study reveals that the thermodynamically unstable gamma-phase exists in both doped beta-Ga2O3 films and beta-(AlxGa1-x)(2)O-3 films, with its thickness correlated to the growth temperature. In doped films, a surface layer of the gamma-phase is observed, and heating results in the growth of a gamma-phase region accompanied by the movement of surface Ga interstitials.
Article
Materials Science, Multidisciplinary
Xueqiang Xiang, Li-Heng Li, Chen Chen, Guangwei Xu, Fangzhou Liang, Pengju Tan, Xuanze Zhou, Weibing Hao, Xiaolong Zhao, Haiding Sun, Kan-Hao Xue, Nan Gao, Shibing Long
Summary: In this study, high-quality β-Ga2O3 films were epitaxially grown using MOCVD with different donor concentrations, and their shallow donor states were investigated. The unintentional doping effects were found to have a significant impact on the donor states, and a method to reduce the unintentional doping effect was proposed.
SCIENCE CHINA-MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Di Wang, Xiaochen Ma, Hongdi Xiao, Yong Le, Jin Ma
Summary: This study successfully prepared epitaxial beta-Ga2O3 films with different Ta doping concentrations, showcasing the ability to control carrier concentration and electrical properties by adjusting Ta concentration. The obtained films exhibited high quality single crystal structure and excellent transmittance in the visible light region.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Materials Science, Multidisciplinary
Sangita Bhowmick, Rajib Saha, Madhuri Mishra, Ankita Sengupta, Sanatan Chattopadhyay, Subhananda Chakrabarti
Summary: The impact of oxygen concentration on the structural, optical properties, and device performance of Ga2O3 thin film was investigated by controlling the oxygen flow rate during deposition. Higher oxygen flow rate led to poorer crystalline quality, increased film roughness, and introduction of defects. Decreasing oxygen concentration resulted in an increase in optical bandgap, a decrease in blue band contribution, and reduced defect concentration, surface roughness, and interface states. These findings are significant for improving the quality of Ga2O3 films and their applications in device fabrication.
MATERIALS TODAY COMMUNICATIONS
(2022)
Article
Materials Science, Multidisciplinary
V Montedoro, A. Torres, S. Dadgostar, J. Jimenez, M. Bosi, A. Parisini, R. Fornari
Summary: Cathodoluminescence investigations were conducted on epsilon-Ga2O3 samples grown with different carrier gases, showing that an increase in Si concentration results in reduced emission intensity, with no evidence of band-to-band recombination. Temperature dependence of the CL signal suggests radiative transitions from the CB to deep acceptor states, likely of intrinsic nature.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2021)
Article
Physics, Condensed Matter
Wenbo Tang, Xueli Han, Xiaodong Zhang, Botong Li, Yongjian Ma, Li Zhang, Tiwei Chen, Xin Zhou, Chunxu Bian, Yu Hu, Duanyang Chen, Hongji Qi, Zhongming Zeng, Baoshun Zhang
Summary: This study investigates the homoepitaxial growth of Si-doped beta-Ga2O3 films on semi-insulating (100) beta-Ga2O3 substrates using metalorganic chemical vapor deposition (MOCVD). By optimizing the growth conditions, the diffusion length of Ga adatoms is increased, resulting in suppressed 3D island growth patterns and improved surface morphology. The Si-doped beta-Ga2O3 film demonstrates high crystal quality, smooth surface morphology, and effective Si doping.
JOURNAL OF SEMICONDUCTORS
(2023)
Article
Physics, Applied
Yafei Huang, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
Summary: Monolithic and phosphor-free LEDs based on vertically integrated Ga2O3:Tm, Ga2O3:Eu, and Ga2O3:Er films have achieved direct white light emission with current-controlled color tunability. The white light emission results from the combination of emissions from different ions, demonstrating full color tunability by intentionally modifying the thickness ratios of different monolayers. This study paves the way for full-color displays and solid-state lighting technology using rare-earth doped Ga2O3.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Zhenni Yang, Xiangyu Xu, Yan Wang, Siliang Kuang, Duanyang Chen, Hongji Qi, K. H. L. Zhang
Summary: Si-doped beta-Ga2O3 thin films grown on vicinal a-Al2O3 (0001) substrates exhibit high electrical conductivity and deep ultraviolet (DUV) transparency, making them promising candidates for transparent electrodes. The use of miscut Al2O3 substrates promotes improved crystal quality and electrical properties. The Si-doped films achieved a high conductivity of 37 S cm(-1) and average DUV transparency of 85% on a 6 degrees miscut substrate. The films also exhibit low work function, making them suitable for efficient electron injection in DUV optoelectronic devices.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Tiankun Wang, Sha Shiong Ng, Way Foong Lim, Hock Jin Quah, Muhammad Fadhirul Izwan Bin Abdul Malik, Wei Sea Chang
Summary: High-contrast green luminescence was achieved in molybdenum (Mo)-doped beta-phase gallium oxide (/3-Ga2O3) through sol-gel spin coating. The doping did not significantly alter the crystal structure, surface morphology, and energy bandgap of the films. The Mo-doped films exhibited a beta phase structure with smooth surface morphology, and the luminescence changed from blue to green, with improved contrast.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
Article
Optics
Yafei Huang, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
Summary: In this study, Eu doped Ga2O3 thin films were prepared and the influence of thermal annealing temperature and ambient on their optical and structural properties was investigated. The results showed that annealing in an oxygen ambient at 600 degrees C significantly enhanced the red luminescence of Ga2O3:Eu. Higher Eu concentrations in the films also led to stronger photoluminescence enhancement, providing a method to suppress concentration quenching. This study has potential implications for the development of highly efficient red light-emitting devices based on Ga2O3:Eu films.
JOURNAL OF LUMINESCENCE
(2022)
Article
Materials Science, Ceramics
Shiwei Zhuang, Xue Ma, Daqiang Hu, Xin Dong, Baolin Zhang
CERAMICS INTERNATIONAL
(2018)
Article
Materials Science, Multidisciplinary
Hui Wang, Yang Zhao, Jingjie Li, Yijian Zhou, Zhifeng Shi, Chuanlei Yin, Shiwei Zhuang, Fan Yang
MATERIALS RESEARCH EXPRESS
(2019)
Article
Engineering, Electrical & Electronic
Shiwei Zhuang, Jiale Tang, Zhiqiang Gu, Dongchen Che, Dongdong Hu, Lu Chen, Kaidong Xu
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2019)
Article
Engineering, Electrical & Electronic
Yang Zhao, Hui Wang, Xinzhong Li, Jingjie Li, Zhifeng Shi, Guoguang Wu, Shiwei Zhuang, Chuanlei Yin, Fan Yang
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2019)
Article
Engineering, Electrical & Electronic
Shiwei Zhuang, Jing He, Xue Ma, Yang Zhao, Hui Wang, Baolin Zhang
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2020)
Article
Physics, Multidisciplinary
Yudong Zhang, Jiale Tang, Yongjie Hu, Jie Yuan, Lulu Guan, Xingyu Li, Hushan Cui, Guanghui Ding, Xinying Shi, Kaidong Xu, Shiwei Zhuang
Summary: The study evaluated SiN(x) thin films deposited by ICP-CVD as electrical insulating films for capacitor devices. The highest dielectric strength of SiN(x) was achieved by carefully tuning process parameters to control hydrogen content, as confirmed through various measurements and characterizations.
Article
Chemistry, Applied
Shiwei Zhuang, Xingyu Li, Jian Liu
Summary: A series of innovative conjugated electrochromic polymers have been designed and synthesized in this study, which can control color changes with applied external potential and achieve light-induced coloration effect. The design of these polymers expands the application range of electrochromic materials and provides new strategies for energy-saving material design.
Article
Physics, Applied
Yongjie Hu, Yudong Zhang, Xingyu Li, Jie Yuan, Lulu Guan, Zhuang Liu, Xiaobo Liu, Dongdong Hu, Kaidong Xu, Shiwei Zhuang
Summary: The RF ion source is important due to its advantages, but the issue of high-density plasma uniformity restricts its applications. Simulation and experimental results suggest that applying specific coil currents can improve the uniformity, providing valuable suggestions for optimizing the RF ion source.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2022)
Review
Physics, Condensed Matter
Lulu Guan, Xingyu Li, Dongchen Che, Kaidong Xu, Shiwei Zhuang
Summary: This paper presents the basic properties and applications of GaN, various etching methods, and reviews of GaN plasma ALE systems, comparing their similarities and differences. Additionally, it outlines the industrial application of GaN plasma ALE.
JOURNAL OF SEMICONDUCTORS
(2022)
Article
Materials Science, Multidisciplinary
J. I. E. Yuan, X. I. N. G. Y. U. LI, L. U. L. U. Guan, Z. H. U. A. N. G. Liu, S. H. U. O. Dong, Y. U. X. I. N. Yang, K. A. I. D. O. N. G. Xu, S. H. I. W. E. I. Zhuang
Summary: This study investigates the evolution process of triangular blazed gratings from rectangular masks using ion beam etching. A new theoretical model, called the six-surface intermediate (SSI) model, is proposed to explain this morphological evolution. The actual morphologies of blazed gratings with different process parameters are characterized by scanning electron microscopy, confirming the correctness of the new model. This research has important guiding significance for the fabrication of blazed gratings with controllable morphology.
OPTICAL MATERIALS EXPRESS
(2023)
Article
Materials Science, Coatings & Films
Lulu Guan, Xingyu Li, Chunxiang Guo, Xinying Shi, Kaidong Xu, Shiwei Zhuang
Summary: GaN/AlGaN, the third-generation semiconductor, is widely used in advanced power and RF devices. Precise and low-damage etching is crucial for preparing recessed-gate enhancement-mode GaN high electron mobility transistors. This research focuses on two self-limiting AlGaN ALE systems and provides insights into the ALE mechanism of AlGaN.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Proceedings Paper
Computer Science, Hardware & Architecture
Jiale Tang, Yongjie Hu, Yudong Zhang, Zhiqiang Gu, Dongchen Che, Dongdong Hu, Lu Chen, Kaidong Xu, Shiwei Zhuang
2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020)
(2020)
Article
Materials Science, Multidisciplinary
Ziming Zhang, Jingjie Li, Yijian Zhou, Hongyuan Fu, Zixu Zhang, Guojiao Xiang, Yang Zhao, Shiwei Zhuang, Fan Yang, Hui Wang
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS
(2019)
Proceedings Paper
Engineering, Mechanical
Yao-Dong Zhao, Xin Dong, Zheng-Zheng Ma, Da-Qiang Hu, Shi-Wei Zhuang
MECHANICS AND MATERIALS SCIENCE
(2018)
