Selective AuCl3 doping of graphene for reducing contact resistance of graphene devices

Low contact resistance between metal-graphene contacts remains a well-known challenge for building high-performance two dimensional materials devices. In this study, CVD-grown graphene film was doped via AuCl3 solution selectively only to metal (Ti/Au) contact area to reduce the contact resistances without compromising the channel properties of graphene. With 10 mM-AuCl3 doping, doped graphene exhibited low contact resistivity of similar to 897 Omega m, which is lower than that (similar to 1774 Omega m) of the raw graphene devices. The stability of the contact resistivity in atmospheric environment was evaluated. The contact resistivity increased by 13% after 60 days in an air environment, while the sheet resistance of doped graphene increased by 50% after 30 days. The improved stability of the contact resistivity of AuCl3-doped graphene could be attributed to the fact that the surface of doped-graphene is covered by Ti/Au electrode and the metal prevents the diffusion of AuCl3. (C) 2017 Elsevier B.V. All rights reserved.