A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In 1-x Ga x )Se 2 /Mo resistive switching memory device

标题
A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In 1-x Ga x )Se 2 /Mo resistive switching memory device
作者
关键词
-
出版物
APPLIED SURFACE SCIENCE
Volume 433, Issue -, Pages 535-539
出版商
Elsevier BV
发表日期
2017-10-14
DOI
10.1016/j.apsusc.2017.10.073

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