Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2

Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

(2017) Yuzheng Guo et al.   PHYSICAL REVIEW MATERIALS

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

(2016) Tania Roy et al.   APPLIED PHYSICS LETTERS

Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

(2016) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory

(2016) Thomas J. Whittles et al.   CHEMISTRY OF MATERIALS

Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance

(2016) Christopher M. Smyth et al.   Journal of Physical Chemistry C

Few-layer HfS2 transistors

(2016) Toru Kanazawa et al.   Scientific Reports

Electronic Structure and Defect Physics of Tin Sulfides: SnS,Sn2S3, andSnS2

(2016) Yu Kumagai et al.   Physical Review Applied

3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides

(2015) Yuzheng Guo et al.   ACS Applied Materials & Interfaces

Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

(2015) K. E. Aretouli et al.   APPLIED PHYSICS LETTERS

Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts

(2015) Y. Guo et al.   APPLIED PHYSICS LETTERS

Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides

(2015) Filip A. Rasmussen et al.   Journal of Physical Chemistry C

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Vacancy and Doping States in Monolayer and bulk Black Phosphorus

(2015) Yuzheng Guo et al.   Scientific Reports

Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

(2014) Saptarshi Das et al.   ACS Nano

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

(2014) Yuan Huang et al.   ACS Nano

MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors

(2014) Deblina Sarkar et al.   ACS Nano

Stability and electronic structures of native defects in single-layerMoS2

(2014) Ji-Young Noh et al.   PHYSICAL REVIEW B

Sulfur vacancies in monolayer MoS2 and its electrical contacts

(2013) D. Liu et al.   APPLIED PHYSICS LETTERS

Quasiparticle band-edge energy and band offsets of monolayer of molybdenum and tungsten chalcogenides

(2013) Yufeng Liang et al.   APPLIED PHYSICS LETTERS

Band offsets and heterostructures of two-dimensional semiconductors

(2013) Jun Kang et al.   APPLIED PHYSICS LETTERS

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

(2013) Cheng Gong et al.   APPLIED PHYSICS LETTERS

Synthesis, Characterization, and Electronic Structure of Single-Crystal SnS, Sn2S3, and SnS2

(2013) Lee A. Burton et al.   CHEMISTRY OF MATERIALS

Electrical control of neutral and charged excitons in a monolayer semiconductor

(2013) Jason S. Ross et al.   Nature Communications

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

van der Waals Bonding in Layered Compounds from Advanced Density-Functional First-Principles Calculations

(2012) T. Björkman et al.   PHYSICAL REVIEW LETTERS

Structural and electronic properties of ZrX2 and HfX2 (X = S and Se) from first principles calculations

(2011) Hong Jiang   JOURNAL OF CHEMICAL PHYSICS

Screened exchange density functional applied to solids

(2010) Stewart J. Clark et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

It's Time to Reinvent the Transistor!

(2010) T. N. Theis et al.   SCIENCE

Accurate Molecular Van Der Waals Interactions from Ground-State Electron Density and Free-Atom Reference Data

(2009) Alexandre Tkatchenko et al.   PHYSICAL REVIEW LETTERS

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs

(2008) Stephan Lany et al.   PHYSICAL REVIEW B