4.8 Article

Raman Signatures of Broken Inversion Symmetry and In-Plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4

期刊

ADVANCED MATERIALS
卷 30, 期 25, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201706402

关键词

2D material; DFT calculations; in-plane anisotropy; Raman spectroscopy; type-II Weyl semimetal

资金

  1. National Basic Research Program of China (973 Grant) [2013CB921900, 2014CB920900, 2016YFA0301004]
  2. National Natural Science Foundation of China (NSFC) [11374021, 11774010, 11725415, 21573004]
  3. Singapore National Research Foundation (NRF RF Award) [NRF-RF2013-08]
  4. MOE Tier 2 grant [MOE2016-T2-1-131 (S)]
  5. Key Research Program of the Chinese Academy of Sciences [XPDPB08-4]

向作者/读者索取更多资源

The layered ternary compound TaIrTe4 is an important candidate to host the recently predicted type-II Weyl fermions. However, a direct and definitive proof of the absence of inversion symmetry in this material, a prerequisite for the existence of Weyl Fermions, has so far remained evasive. Herein, an unambiguous identification of the broken inversion symmetry in TaIrTe4 is established using angle-resolved polarized Raman spectroscopy. Combining with high-resolution transmission electron microscopy, an efficient and nondestructive recipe to determine the exact crystallographic orientation of TaIrTe4 crystals is demonstrated. Such technique could be extended to the fast identification and characterization of other type-II Weyl fermions candidates. A surprisingly strong in-plane electrical anisotropy in TaIrTe4 thin flakes is also revealed, up to 200% at 10 K, which is the strongest known electrical anisotropy for materials with comparable carrier density, notably in such good metals as copper and silver.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据