High Performance p- and n-Type Light-Emitting Field-Effect Transistors Employing Thermally Activated Delayed Fluorescence
出版年份 2018 全文链接
标题
High Performance p- and n-Type Light-Emitting Field-Effect Transistors Employing Thermally Activated Delayed Fluorescence
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 28, Issue 28, Pages 1800340
出版商
Wiley
发表日期
2018-05-22
DOI
10.1002/adfm.201800340
参考文献
相关参考文献
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