4.7 Article

Growth mode of austenite during reversion from martensite in Fe-2Mn-1.5Si-0.3C alloy: A transition in kinetics and morphology

期刊

ACTA MATERIALIA
卷 154, 期 -, 页码 1-13

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2018.05.035

关键词

Reversion; Austenite; Kinetics; Element partitioning; Interface mobility

资金

  1. Technological Development of Innovative New Structural Materials project through the New Energy and Industrial Technology Development Organization of Japan
  2. Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science and Technology, Japan

向作者/读者索取更多资源

The kinetics and element partitioning during austenite (gamma) reversion from lath martensite in Fe-2Mn-1.5Si-0.3C (mass%) alloy have been investigated. Two different types of gamma in terms of crystallography, with Kurdjumov-Sachs (K-S) and without K-S orientation relationships with respect to the surrounding tempered martensite matrix, are formed. A transition in kinetics and element partitioning is related to the differences in crystallography. At low temperature, the growth of both types of gamma is accompanied with the partitioning of Mn and Si. Consequently, the growth rates and appearance of the K-S and non K-S gamma are similar and the reverted gamma structure consists of acicular gamma dominantly. On the other hand, at high temperature, only the K-S gamma grows with partitioning of alloying elements in contrast to the partitionless growth of the non K-S gamma, which leads to the formation of coarse globular gamma. DICTRA simulation reveals that the variations in driving force for reversion and the interface mobility induce the transition of element partitioning. At large driving force and interface mobility, partitionless growth is possible and consequently coarse globular gamma is formed by the fast growth of the non K-S gamma at high temperature. On the other hand, reduction of the driving force or interface mobility induces the transition from partitionless to partitioning growth, which results in the dominant formation of thin acicular gamma at low temperature. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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