期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 18, 页码 15926-15932出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b01581
关键词
single-walled carbon nanotubes; BaTiO3-based dielectric; self-aligned printing; imprinted substrate; reservoirs/capillary channels; high performance thin-film transistors
资金
- Multi-University Research Initiative (MURI) program - Office of Naval Research [N00014-11-1-0690]
- Xerox Corporation
We present a self-aligned process for printing thin-film transistors (TFTs) on plastic with single-walled carbon nanotube (SWCNT) networks as the channel material. The SCALE (self-aligned capillarity-assisted lithography for electronics) process combines imprint lithography with inkjet printing. Specifically, inks are jetted into imprinted reservoirs, where they then flow into narrow device cavities due to capillarity. Here, we incorporate a composite high-k gate dielectric and an aligned conducting polymer gate electrode in the SCALE process to enable a smaller areal footprint than prior designs that yields low-voltage SWCNT TFTs with average p-type carrier mobilities of 4 cm(2)/V.s and ON/OFF current ratios of 10(4). Our work demonstrates the promising potential of the SCALE process to fabricate SWCNT-based TFTs with favorable I-V characteristics on plastic substrates.
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