期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 18, 页码 15952-15961出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b02851
关键词
n-type; OFET; high stability; semiconductor-dielectric interface; density-of-states
资金
- European Research Council (ERC) [StG 2012-306826 e-GAMES]
- Generalitat de Catalunya [2017-SGR-918]
- Spanish Ministry of Economy and Competitiveness [FANCY CTQ2016-80030-R, ENE2017-87671-C3-2-R, SEV-2015-0496]
Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.
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