4.6 Article

Determining Atomic-Scale Structure and Composition of Organo-Lead Halide Perovskites by Combining High-Resolution X-ray Absorption Spectroscopy and First-Principles Calculations

期刊

ACS ENERGY LETTERS
卷 2, 期 5, 页码 1183-1189

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.7b00182

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资金

  1. Office of Science of the U.S. Department of Energy [DE-SC0004993]
  2. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-76SF00515]
  3. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
  4. Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy [DE-AC02-05CH11231]
  5. Feodor-Lynen program of the Alexander-von-Humboldt Foundation
  6. Swiss National Science Foundation [P2EZP2_155586]
  7. Swiss National Science Foundation (SNF) [P2EZP2_155586] Funding Source: Swiss National Science Foundation (SNF)

向作者/读者索取更多资源

We combine high-energy resolution fluorescence detection (HERFD) X-ray absorption spectroscopy (XAS) measurements with first-principles density functional theory (DFT) calculations to provide a molecular-scale understanding of local structure, and its role in defining optoelectronic properties, in CH3NH3Pb(I1-xBrx)(3) perovskites. The spectra probe a ligand field splitting in the unoccupied d states of the material, which lie well above the conduction band minimum and display high sensitivity to halide identity, Pb-halide bond length, and Pb-halide octahedral tilting, especially for apical halide sites. The spectra are also sensitive to the organic cation. We find that the halides in these mixed compositions are randomly distributed, rather than having preferred octahedral sites, and that thermal tilting motions dominate over any preferred structural distortions as a function of halide composition. These findings demonstrate the utility of the combined HERFD XAS and DFT approach for determining structural details in these materials and connecting them to optoelectronic properties observed by other characterization methods.

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