期刊
NPJ QUANTUM INFORMATION
卷 3, 期 -, 页码 -出版社
SPRINGERNATURE
DOI: 10.1038/s41534-016-0003-1
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类别
资金
- United States Department of Defense
- Office of the Director of National Intelligence, Intelligence Advanced Research Projects Activity
- Army Research Office [W911NF-11-1-0068]
- Department of Defense through the National Defense Science Engineering Graduate Fellowship Program
- National Science Foundation [ECS0335765]
Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 109 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of similar to 99%, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.
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