Article
Materials Science, Multidisciplinary
Na Zhang, Fakun Wang, Pengyu Li, Yi Liang, Hao Luo, Decai Ouyang, Linbao Luo, Jinsong Wu, Yinghe Zhao, Yuan Li, Tianyou Zhai
Summary: In this study, a novel 2D hybrid heterostructure of bismuth selenide/oxyselenide with the coexistence of lateral and vertical interfaces is reported. The hybrid structure provides a large interface area and a wide depletion region, significantly improving the device's optoelectronic performances. The photodetectors exhibit reduced dark current and ultrafast photoresponse rate, and demonstrate outstanding image sensing capability over a wide spectral range.
Article
Chemistry, Physical
Muhammad Usman, Sobia Nisar, Deok-kee Kim, Sergii Golovynskyi, Muhammad Imran, Ghulam Dastgeer, Liang Wang
Summary: A lateral phototransistor structure based on mechanically exfoliated multilayer black arsenic (b-As) is studied for its in-plane anisotropic photoelectrical properties. The morphology and structure of the b-As flake are characterized with respect to light polarization and crystal structure orientation. The lateral photodetector structure is prepared by depositing polar-oriented electrodes along the b-As crystal directions. Angle-resolved electrical transport and polarization resolved photocurrent measurements reveal strong in-plane anisotropic photoelectrical properties, with higher conductance and photocurrent across the armchair direction than the zigzag one.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Chemistry, Multidisciplinary
Yao Zhang, Tao Zhu, Nannan Zhang, Yubin Li, Xiaobo Li, Minglu Yan, Yue Tang, Jinying Zhang, Man Jiang, Hua Xu
Summary: A VP/MoS2 van der Waals heterostructure is constructed to design a high-performance 2D photodetector by utilizing the synergistic effect of the two materials. The VP/MoS2 heterostructure photodetector achieves excellent photoresponse performances with ultrahigh responsivity, high specific detectivity, large external quantum efficiency, and gate tunability. Moreover, the VP/MoS2 heterostructure photodetector indicates superior air stability due to the effective protection of VP by MoS2 encapsulation. This work sheds light on the future study of the fundamental property and optoelectronic device application of VP.
Article
Chemistry, Physical
Xin Wang, Ming Ma, Xuewen Zhao, Peng Jiang, Yan Wang, Jiahong Wang, Jinying Zhang, Fuxiang Zhang
Summary: A VP/BP heterostructure was constructed using a phase engineering strategy, creating a well-matched heterophase interface to improve charge separation efficiency and photocatalytic activity for hydrogen evolution. This study highlights the feasibility of phase engineering and provides an alternative strategy to enhance the performance of photocatalysts.
Article
Materials Science, Multidisciplinary
Yuqiang Li, Dan Zhang, Lemin Jia, Siqi Zhu, Yanming Zhu, Wei Zheng, Feng Huang
Summary: A judiciously designed strategy involving the use of an ultra-thin conductive Ga2O3:Si nanolayer has been demonstrated for preparing a high-quality (Al0.68Ga0.32)(2)O-3 crystalline film with a broadened bandgap. The resulting photodetector showed promising performance with a high on-off ratio, open-circuit voltage, and responsivity, indicating the potential of the strategy for improving (AlGa)(2)O-3 sesquioxides for VUV photodetection applications.
SCIENCE CHINA-MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Xinhong Zhao, Yu Tao, Jixiang Dong, Yongchu Fang, Xiaoxian Song, Zaoxue Yan
Summary: In this study, Cs3Cu2I5/ZnO heterostructure flexible photodetectors were successfully constructed using a low-temperature solution method and spin-coating technique. The heterostructure exhibited enhanced light/dark current ratio and ultraviolet-to-visible rejection ratios. The Cs3Cu2I5/ZnO heterostructure shows promising potential for wearable and portable visible-blind ultraviolet optoelectronic devices.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Xiao-Qiang Jiang, Shao-Nan Chen, Ruo-Xuan Sun, Zhi-Bo Liu
Summary: A controllable graphene/Bp van der Waals heterostructure tunneling device was reported by controlling oxidation etching time. Different thickness oxide layers were realized in different regions of the sample. With increased etching time, the tunneling effect and rectification effect gradually enhanced, providing possibilities for novel optoelectronic device design.
Article
Nanoscience & Nanotechnology
Tao Yan, Fengjing Liu, Yanrong Wang, Jia Yang, Chuyun Ding, Yuchen Cai, Zilong Wu, Xueying Zhan, Feng Wang, Yanhong Tian, Jun He, Zhenxing Wang
Summary: This study reports on the photovoltaic effect in 2D-layered materials and van der Waals heterostructures, showing that the short-circuit current density can be significantly increased by introducing perovskite and enhancing the ferroelectric polarization. This demonstrates the potential of high-performance optoelectronic devices.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
John Wellington John, Veerendra Dhyani, Alka Jakhar, Harmanpreet Kaur Sandhu, Sheetal Dewan, Samit K. Ray, Samaresh Das
Summary: This study discusses a polarization-sensitive SWIR phototransistor based on black arsenic and germanium heterojunction, which exhibits high responsivity, high detectivity, fast response, and highly polarization sensitive photocurrent.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Umar Farooq, Kossi A. A. Min-Dianey, Pandey Rajagopalan, Muhammad Malik, Damgou Mani Kongnine, Jeong Ryeol Choi, Phuong V. Pham
Summary: The study presents a new generation of photodetection devices supported by silicon film and graphite film. The experimental and computational results show good detection performance and confirm the enhanced light absorption of the stacked 2D heterostructure film-based device.
Article
Chemistry, Physical
Man Zhao, Xiaoru Cheng, He Xiao, Jianru Gao, Shoufeng Xue, Xiaoxia Wang, Haishun Wu, Jianfeng Jia, Nianjun Yang
Summary: In this study, a highly active heterostructure of cobalt-iron oxide/black phosphorus nanosheets was synthesized using a simple and novel method. The heterostructure showed excellent electrocatalytic performance for the oxygen evolution reaction (OER), and the introduction of light illumination further enhanced its activity. The results highlight the potential of black phosphorus nanosheets in constructing high-performance catalysts for OER.
Article
Engineering, Electrical & Electronic
Akshai Shyam, S. Aryalakshmi, Sudip K. Batabyal, Ramasubramanian Swaminathan
Summary: In this study, layered bismuth copper-oxysulfide (BiCuOS) semiconductor was successfully synthesized and verified using various characterization techniques. The BiCuOS semiconductor exhibited p-type behavior with an indirect bandgap of 1.05 eV. A n-Si/BiCuOS/p-CuI heterojunction photodetector was developed, which demonstrated a remarkable response time in milliseconds and a high spectral detectivity of 2.7 x 109 Jones in the red light range (620 nm) under self-powered conditions, and capable detection across the wavelength range of 405-850 nm. The proposed Si/BiCuOS/p-CuI heterojunction shows great potential as a high-performance device for broadband light detection applications.
SENSORS AND ACTUATORS A-PHYSICAL
(2023)
Article
Chemistry, Multidisciplinary
Yong Kang, Zhengjun Li, Fengying Lu, Zhiguo Su, Xiaoyuan Ji, Songping Zhang
Summary: A red/black phosphorus composite nanosheet, M-RP/BP@ZnFe2O4, was synthesized to address the stability and efficiency issues of black phosphorus nanosheets in cancer photonic therapy. The composite nanosheets exhibited high performance in cancer phototherapy with features including Z-scheme heterojunction structure, capability to break tumor microenvironment, water decomposition to produce toxic compounds, improved targeting with cell membrane wrapping, and triggering of photonic therapy with a specific laser wavelength.
Article
Materials Science, Multidisciplinary
Xinyi Xue, Chunhui Lu, Mingwei Luo, Taotao Han, Yuqi Liu, Yanqing Ge, Wen Dong, Xinlong Xu
Summary: In this study, a SnSe2/ZnS heterostructure was constructed using a two-step physical vapor deposition method. The heterostructure exhibited high photoresponse and photoelectrocatalytic activity, which can be attributed to the high light utilization and efficient charge transport.
SCIENCE CHINA-MATERIALS
(2023)
Article
Chemistry, Physical
Biplab Bhattacharyya, Alka Sharma, Mandeep Kaur, B. P. Singh, Sudhir Husale
Summary: Topological insulators represent a new electronic phase with promising potential in various applications. Combining TIs with carbon-based nanomaterials offers a novel and promising technique for photodetection. Experimental results show efficient light absorption and electron hole pair generation in a photodetector based on a hybrid of TIs and carbon nanotubes under visible and near infrared illumination.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Multidisciplinary
Sifan Li, Mei-Er Pam, Yesheng Li, Li Chen, Yu-Chieh Chien, Xuanyao Fong, Dongzhi Chi, Kah-Wee Ang
Summary: The study demonstrates a memristor crossbar array using large-scale hafnium diselenide thin films and a metal-assisted transfer technique, showing low switching voltage and energy, high recognition accuracy, and power efficiency. Hardware multiply-and-accumulate operation and programmable kernel-based image processing were successfully showcased.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Chit Siong Lau, Jing Yee Chee, Liemao Cao, Zi-En Ooi, Shi Wun Tong, Michel Bosman, Fabio Bussolotti, Tianqi Deng, Gang Wu, Shuo-Wang Yang, Tong Wang, Siew Lang Teo, Calvin Pei Yu Wong, Jian Wei Chai, Li Chen, Zhong Ming Zhang, Kah-Wee Ang, Yee Sin Ang, Kuan Eng Johnson Goh
Summary: The research revealed that carrier mobility in WS2 devices is influenced by interface roughness rather than the commonly thought charge impurity limit. The use of HfO2 enables the electrostatic gate-defined quantum confinement of quantum dots in WS2 devices, opening up new possibilities for their application in quantum information processing.
ADVANCED MATERIALS
(2022)
Review
Materials Science, Multidisciplinary
Chao Zhang, Hangbo Zhou, Shuai Chen, Gang Zhang, Zhi Gen Yu, Dongzhi Chi, Yong-Wei Zhang, Kah-Wee Ang
Summary: Artificial synapses based on 2D materials have the potential to mimic biological synaptic plasticity for brain-like computation. Different structures and physical mechanisms of these devices are discussed, along with their potential applications in neuromorphic computing. The field shows promising prospects for significant advancements.
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
(2022)
Article
Materials Science, Multidisciplinary
Muhammad Fauzi Sahdan, Arramel, Sharon Lim Xiaodai, Hong Wang, Muhammad Danang Birowosuto, Sow Chorng Haur, Kah-Wee Ang, Andrew Thye Shen Wee
Summary: This study demonstrates a direct surface conversion from VSe2 to VO2 using laser exposure in ambient conditions, revealing a first-order metal-insulator transition. The researchers also observed enhanced photoluminescence intensity and peak shifts at the transition temperature, suggesting a correlation with the band structure transformation. Additionally, an electrically induced metal-insulator transition was observed in a lateral VSe2-VOx heterojunction device.
PHYSICAL REVIEW MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Mei Er Pam, Sifan Li, Tong Su, Yu-Chieh Chien, Yesheng Li, Yee Sin Ang, Kah-Wee Ang
Summary: This study demonstrates a facile approach to transform an inactive rhenium disulfide (ReS2) into an effective switching material through interfacial modulation induced by molybdenum-irradiation (Mo-i) doping. The results show that ReS2 of various thicknesses can be switchable by modulating the Mo-irradiation period. The fabricated device exhibits bipolar non-volatile switching, programmable multilevel resistance states, and long-term synaptic plasticity. Additionally, it achieves a high MNIST learning accuracy of 91% under a non-identical pulse train.
ADVANCED MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Jun-young Kim, Xin Ju, Kah-Wee Ang, Dongzhi Chi
Summary: Two-dimensional materials have attracted attention for their potential in scientific breakthroughs and technological innovations. The integration of 2DMs on Si CMOS platform or flexible electronics has gained interest for applications such as back-end-of-line transistors, memory devices/ selectors, and sensors. The successful transfer of 2DM layers from growth substrate to Si is crucial for these applications, and various transfer methods leveraging van der Waals transfer capability have been developed. This review surveys and compares these transfer methods, focusing on 2D TMDC film transfer and 2DM template-assisted van der Waals growth/transfer of non-2D thin films.
Article
Chemistry, Multidisciplinary
Yu-Chieh Chien, Heng Xiang, Yufei Shi, Ngoc Thanh Duong, Sifan Li, Kah-Wee Ang
Summary: The study demonstrates a hafnium oxide-based ferroelectric encoder for temporal-efficient information processing in SNN. This high-performance ferroelectric encoder features superior switching efficiency and robust ferroelectric response, achieving a broad dynamic range.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Heng Xiang, Yu-Chieh Chien, Lingqi Li, Haofei Zheng, Sifan Li, Ngoc Thanh Duong, Yufei Shi, Kah-Wee Ang
Summary: This study demonstrates the capabilities of an integrated ferroelectric HfO2 and 2D MoS2 channel FeFET for achieving high-performance 4-bit per cell memory and low variation and power consumption synapses. The device retains the ability to implement diverse learning rules and accurately recognizes MNIST handwritten digits with over 94% accuracy using online training mode. These results highlight the potential of FeFET-based in-memory computing for future neuromorphic computing applications.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Yu-Chieh Chien, Heng Xiang, Jianze Wang, Yufei Shi, Xuanyao Fong, Kah-Wee Ang
Summary: By harnessing the physically unclonable properties, true random number generators (TRNGs) can generate random bitstreams that are cryptographically secured, alleviating security concerns. However, conventional hardware often shows predictable patterns susceptible to machine learning attacks. This paper presents a low-power self-corrected TRNG based on molybdenum disulfide ferroelectric field-effect transistors, which exhibits enhanced stochastic variability and passes machine learning attacks, as well as statistical tests.
Article
Automation & Control Systems
Ngoc Thanh Duong, Yu-Chieh Chien, Heng Xiang, Sifan Li, Haofei Zheng, Yufei Shi, Kah-Wee Ang
Summary: A 1D array of Fe-FET based on alpha-In2Se3 channel is demonstrated, which exhibits volatile memory effect and is capable of implementing various RC systems. It achieves high accuracy in image classification and accurate forecasting of real-life chaotic systems such as weather.
ADVANCED INTELLIGENT SYSTEMS
(2023)
Article
Chemistry, Multidisciplinary
Zhengjin Weng, Haofei Zheng, Wei Lei, Helong Jiang, Kah-Wee Ang, Zhiwei Zhao
Summary: This study demonstrates the successful fabrication of high-yield, high-performance, and uniform memristors using a single-crystalline few-layered manganese phosphorus trisulfide (MnPS3) as a resistive switching medium. The memristors exhibit desired characteristics for neuromorphic computing and achieve a high accuracy of 95.15% in supervised learning using the MNIST handwritten recognition dataset. This research is significant for experimental studies on memristors.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Yangwu Wu, Ngoc Thanh Duong, Yu-Chieh Chien, Song Liu, Kah-Wee Ang
Summary: Neuromorphic computing, specifically reservoir computing (RC), is an effective approach for time-series analysis and forecasting in economics and engineering. In this study, a synapse device based on CuInP2S6 (CIPS) material is demonstrated, achieving synaptic performance emulation and temporal dynamics under electrical stimulation. The migration of Cu+ ions in CIPS is controlled, and the device exhibits low normalized root mean square errors (NRMSE) for various tasks, highlighting the potential of CIPS for real-time signal processing and expanding applications in neuromorphic computing.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Xinke Liu, Yuheng Lin, Zhichen Lin, Jiangchuan Wang, Ziyue Zhang, Yugeng Li, Xiaohua Li, Deliang Zhu, Kah-Wee Ang, Ming Fang, Wangying Xu, Qi Wang, Wenjie Yu, Qiang Liu, Shuangwu Huang
Summary: The use of plasmonic structure enhances the performance of MoS2-based devices, and in this study, a plasmonic-enhanced few-layer MoS2 photodetector was successfully prepared on a GaN substrate, demonstrating high responsivity and low noise.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Review
Chemistry, Physical
Heng Xiang, Yu-Chieh Chien, Yufei Shi, Kah-Wee Ang
Summary: The security of Internet-of-Things (IoT) is crucial in various aspects such as device-to-device communication, sensing and actuating, and information exchange. Conventional cryptographic algorithms and silicon-based security primitives are constantly challenged by evolving attack methods, thus the implementation of hardware security using 2D materials is worth exploring. This review summarizes the research progress in 2D material-based true random number generators (TRNGs), physical unclonable functions (PUFs), and other security applications, and discusses entropy sources, reliability, circuit, and machine learning modeling attacks on TRNGs and PUFs.
Review
Engineering, Electrical & Electronic
Li Chen, Mei Er Pam, Sifan Li, Kah-Wee Ang
Summary: Ferroelectric memory devices based on 2D materials are recognized as promising building blocks for brain-like neuromorphic computing due to their fast-switching speed and ultra-low power consumption. The unique properties of 2D materials and their high compatibility with existing technology make them potential candidates for extending state-of-the-art ferroelectric memory technology into atomic-thin scale.
NEUROMORPHIC COMPUTING AND ENGINEERING
(2022)