Effects of Grain Boundary Density on the Gas Sensing Properties of Triethylsilylethynyl-Anthradithiophene Field-Effect Transistors

标题
Effects of Grain Boundary Density on the Gas Sensing Properties of Triethylsilylethynyl-Anthradithiophene Field-Effect Transistors
作者
关键词
-
出版物
Advanced Materials Interfaces
Volume 5, Issue 3, Pages 1701399
出版商
Wiley
发表日期
2017-12-22
DOI
10.1002/admi.201701399

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