4.6 Article

Fabrication of Highly Metallic TiN Films by Pulsed Laser Deposition Method for Plasmonic Applications

期刊

ACS PHOTONICS
卷 5, 期 3, 页码 814-819

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.7b00942

关键词

thin film; pulsed laser deposition; plasmonics; titanium nitride; flexible device

资金

  1. JSPS KAKEHI [15K17447, 16H06364, 17H04801]
  2. CREST Phase Interface Science for Highly Efficient Energy Utilization, Japan Science and Technology Agency [JPMJCR13C3]
  3. Japan Prize Foundation

向作者/读者索取更多资源

We report the fabrication of titanium nitride (TiN) films with the best plasmonic behavior reported so far by the pulsed laser deposition method. Even though the deposition is done at room temperature (similar to 25 degrees C) and grown on an amorphous native oxide of a silicon wafer, the plasmonic property of the TiN is comparable to that of gold, which is a conventional plasmonic material in the visible to near-infrared region. Because of the highly plasmonic nature of the TiN, the near field around the TiN nanostructure can be as high as that of a gold nanostructure. A room-temperature process without a strict requirement on the substrate allows depositing a TiN film even on a flexible polymer film without degrading its property. Our results pave the way for using TiN as a truly practical plasmonic material, replacing the use of noble metals.

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