期刊
NANOSCALE RESEARCH LETTERS
卷 12, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-017-2155-0
关键词
Resistive random access memory; Interfacial switching; Multistate; Compliance-free
资金
- Engineering and Physical Sciences Research Council (EPSRC) [EP/I010890/1, EP/509015FP/1]
- XRD [EP/K00509X/1, EP/K009877/1]
- Engineering and Physical Sciences Research Council [EP/K009877/1, EP/I010890/1, EP/K00509X/1] Funding Source: researchfish
- EPSRC [EP/K00509X/1, EP/K009877/1, EP/I010890/1] Funding Source: UKRI
A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2-x/ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2-x layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retracting of oxygen ions. The switching is compliance-free due to the intrinsic series resistor by the filaments formed in the ZrO2 layers. By tuning the RESET voltages, controllable and stable multistate memory can be achieved which clearly points towards the capability of developing the nextgeneration multistate high-performance memory.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据