期刊
NANO ENERGY
卷 33, 期 -, 页码 157-167出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nanoen.2017.01.041
关键词
Grain boundary; CIGS thin film; Composition; Band alignment
类别
资金
- Theme-based Research [T23-407/13-N]
- Hong Kong Research Grant Council [14306014]
- National Major Science Research Program of China [2012CB933700]
- National Nature Science Foundation of China [61474132]
- Shenzhen Basic Research [JCYJ20140417113430725]
Polycrystalline Cu(InGa)Se-2 (CIGS) thin film is a well-known light absorber material for photovoltaic solar cells. However, the mechanism of the benignity of its grain boundary (GB) remains in dispute. By using a combination of experimental techniques, we have systematically investigated the compositions, structures, and properties of the grain interior (GI) and GB of the polycrystalline CIGS films at nanometer scale. A definitive Cu deficient layer with thickness depending on the overall Cu content of the films was observed near the non Sigma 3 GBs with distinctly different characteristics from GIs. The band alignment between GB and GI was discovered to be of type II with downward offset for both conduction and valence bands at GB, well correlating to the local copper deficiency and structure. Our findings expressively support the type inversion and large hole barrier in this GB layer, and establish a comprehensive mechanism for the benignity of the CIGS grain boundaries towards carrier recombination.
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