期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 5, 期 3, 页码 522-526出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc05119g
关键词
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [NRF-2015R1A2A2A01003520]
- MSIP (Ministry of Science, ICT and Future Planning), Korea, under the ITRC (Information Technology Research Center) support program [IITP-2016-H8501-16-1009]
- Basic Science Research Program through the NRF - Ministry of Education [2015R1A6A1A03031833]
Fabrication of a multilayered quantum dot-light-emitting diode (QLED) with an inverted architecture cannot be usually fully solution-processed mainly due to the significant destruction of the pre-existing quantum dot (QD) emitting layer (EML) occurring during the subsequent solution-deposition of the hole transport layer (HTL). To overcome this processing difficulty, we devise a simple approach of introducing hexamethyldisilazane (HMDS) to a QD dispersion to modify the surface of the QD film. In sharp contrast to the QD film without HMDS, the HMDS-mediated QD film maintains a high degree of QD integrity without any noticeable damage after HTL solution-processing. Two comparative inverted QLEDs based on original versus HMDS-mediated QDs are fabricated under the same full-solution processing conditions. A remarkable difference in device efficiency is indeed observed, specifically displaying maximum external quantum efficiencies of 2.32 and 11.6% for the former and latter devices, respectively, evidently indicating that our HMDS-mediated strategy is highly effective in well preserving the QD EML and thus achieving a full-solution processed efficient inverted QLED.
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