期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 5, 期 8, 页码 2107-2113出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc04960e
关键词
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资金
- National Basic Research Program of China (973 Program) [2013CB933500, 2012CB932400]
- Major Research Plan of the National Natural Science Foundation of China [91027021, 91233110]
- National Natural Science Foundation of China [51172151, 61422403]
For solar cells, high open circuit voltage is necessary for their high output voltage. Usually, two methods are used to increase the open circuit voltage: using suitable and matched large band-gap materials and reduction of saturation current. Herein, large band-gap p-type ZnSe nanowires and n-type CdS films are used to construct core-shell p-n heterojunctions with high open circuit voltage. Furthermore, a 4 nm Si3N4 layer is inserted between the ZnSe core and the CdS shell in order to passivate the interface defects and to reduce recombination and the saturation current. Additionally, a fast annealing process is employed to reduce the series resistance for improved performance. For a typical device, an optimum high open circuit voltage of similar to 1.3 V and an energy conversion efficiency of similar to 5.27% were achieved for its photovoltaic operation. Moreover, tens of devices were fabricated to demonstrate their stable and consistent performance.
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