期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 7, 期 4, 页码 1087-1091出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2017.2690875
关键词
Diffusion length; photoluminescence (PL) imaging; series resistance; solar cells
资金
- Australian Government through Australian Renewable Energy Agency [2014/RND097]
- Australian Research Council [DE150100268]
- Australian Research Council [DE150100268] Funding Source: Australian Research Council
Photoluminescence imaging is a fast and powerful spatially resolved characterization technique, commonly used for silicon wafers and solar cells. In conventional measurements, homogeneous illumination is used across the sample. In this paper, we present a photoluminescence imaging setup that enables inhomogeneous illumination with arbitrary illumination patterns to determine various parameters of solar cells and solar cell precursors. To demonstrate the strength of the proposed inhomogeneous illumination imaging, a set of proof-of-concept measurements have been conducted; these measurements include contactless series resistance imaging, emitter sheet resistance, and diffusion length measurements. The results indicate that the use of inhomogeneous illumination significantly extends the range of photoluminescence imaging applications for the characterization of silicon wafers and solar cells.
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