Article
Chemistry, Multidisciplinary
Avto Tavkhelidze, Amiran Bibilashvili, Larissa Jangidze, Nima E. Gorji
Summary: Recent study observed geometry-induced quantum effects in periodic nanostructures, particularly in Silicon NG layers. The Fermi-level tuning of G-doped layers by changing NG depth was investigated, showing a significant increase in the Fermi level at 10 nm depth, with decreasing effects in p- and n-type substrates. The results were explained using the G-doping theory and G-doped layer formation mechanism introduced in previous works.
Article
Multidisciplinary Sciences
Honghwi Park, Heungsup Won, Changhee Lim, Yuxuan Zhang, Won Seok Han, Sung-Bum Bae, Chang-Ju Lee, Yeho Noh, Junyeong Lee, Jonghyung Lee, Sunghwan Jung, Muhan Choi, Sunghwan Lee, Hongsik Park
Summary: This study reports a technique that can precisely release epitaxial layers in commonly used III-V heterostructures without the need for a sacrificial buffer. The target interface for separation can be selectively determined by adjusting process conditions. This technique will provide higher fabrication flexibility in compound semiconductor technology.
Review
Energy & Fuels
Jiaying Chen, Youtian Mo, Chaoying Guo, Jiansen Guo, Bingshe Xu, Xi Deng, Quan Xue, Guoqiang Li
Summary: The combination of III-V compound semiconductor materials and organic semiconductor materials is a potential pathway to solve the problems of conventional doped p-n junction solar cells. This review presents the recent progress of organic-inorganic hybrid solar cells based on polymers and III-V semiconductors, including materials, devices, growth processes, patterning and etching processes, advanced device structure designs, and optimization pathways for efficiency enhancement. The future development of such hybrid cells is also discussed.
Article
Chemistry, Physical
Yingjie Chen, Baonan Jia, Xiaoning Guan, Lihong Han, Liyuan Wu, Pengfei Guan, Pengfei Lu
Summary: In this study, vdW heterostructures consisting of six group III-V monolayers MX (M = Ga, In, X = P, As, Sb) were systematically investigated for their potential applications in solar cell materials. Different stacking configurations were designed and discussed. The results show that the heterostructures have energetically favorable properties and the stacking model BB-3 holds suitable type-II bandgaps for solar cell applications. GaSb/InSb and GaAs/InAs exhibit high power conversion efficiencies, making them promising candidates for optoelectronic devices.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Yangyang Huang, Yongcheng Zhu, Haoyu Fu, Mingyang Ou, Chenchen Hu, Sijie Yu, Zhiwei Hu, Chien-Te Chen, Gang Jiang, Hongkai Gu, He Lin, Wei Luo, Yunhui Huang
Summary: Mg-pillared LiCoO2, doped with Mg ions to prevent unfavorable phase transitions at high voltages, exhibits high capacity and enhanced cycling stability compared to pristine LiCoO2.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2021)
Article
Chemistry, Physical
Hansung Kim, Gunwu Ju, Seung-Hwan Kim, Kiyoung Lee, Myoungho Jeong, Hyun Cheol Koo, Hyung-jun Kim
Summary: The study utilized interdiffusion between epitaxial Ge layers and GaAs substrates to control the doping concentration and type of the Ge layers, achieving extremely high n-type doping concentration in a Ge layer grown at low temperature. Subsequent annealing processes led to a decrease in doping concentration and an n- to p-type transition due to differences in diffusivity between As and Ga atoms.
SURFACES AND INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
N. Belmiloud, A. Menad, A. Zaoui, M. Ferhat
Summary: This study presents a search for new optimal direct bandgap materials for efficient thin-film photovoltaic cell devices using density functional theory and ab initio evolutionary algorithm. The compounds in focus belong to cationic ternary III-V family. It is found that these materials should be synthesized under moderate growth temperature and have dynamical and structural stability. The predicted solar cell efficiency of AlGaAs2, InGaAs2, InGaP2, InGaN2, and InGaAs2 exceeds those of materials currently used as absorber layer.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2023)
Review
Chemistry, Multidisciplinary
Yanhe Xiang, Bowei Xu, Ying Li
Summary: This mini-review highlights the great potential of solution-processed semiconductor (SPS) materials as cathode interlayers (CILs) in organic solar cells (OSCs). The working mechanism and material design strategy of SPS-based CIL materials are elucidated. The SPS-based CIL materials, including organic small molecules, conjugated polymers, non-conjugated polymers, and transition metal oxides, are summarized and the structure-property-performance relationship of SPS-based CIL materials is revealed.
Review
Energy & Fuels
Lihua Zhu, Xueni Shang, Kaixiang Lei, Cuncun Wu, Shijian Zheng, Cong Chen, Hongwei Song
Summary: From the perspective of perovskite solar cells device structure, the electron transport layer is crucial for carrier recombination suppression. Doping new ions is an effective method to improve electron mobility, but the fundamental mechanism of doping is still lacking in most cases.
Review
Engineering, Electrical & Electronic
Chao Zhao, Zhaonan Li, Tianyi Tang, Jiaqian Sun, Wenkang Zhan, Bo Xu, Huajun Sun, Hui Jiang, Kong Liu, Shengchun Qu, Zhijie Wang, Zhanguo Wang
Summary: This passage discusses the increasing demand for fabricating III-V semiconductor materials on unconventional substrates, highlighting the potential advantages of defect-free epitaxial growth through two-dimensional materials. The unique optical properties of the epitaxy correlating with their growth conditions are explored, along with their applications in optics and nanophotonics. Challenges and remaining obstacles in fully exploiting the potential for practical applications are also addressed.
PROGRESS IN QUANTUM ELECTRONICS
(2021)
Editorial Material
Chemistry, Physical
Kaitlyn T. VanSant, Adele C. Tamboli, Emily L. Warren
Summary: Kaitlyn VanSant has a diverse academic background, focusing on research in solar cell design and applications of perovskite solar cells.
Article
Chemistry, Physical
Changming Ke, Yihao Hu, Shi Liu
Summary: Using first-principles calculations, we demonstrate the softening of unswitchable wurtzite III-V semiconductors at the nanoscale, resulting in ultrathin two-dimensional sheets with reversible polarization states. We identify a three-atomic-layer AlSb sheet that exhibits both ferroelectricity and antiferroelectricity, with tristate switching accompanied by a metal-semiconductor transition. Phonon spectrum calculations, ab initio molecular dynamics simulations, and variable-composition evolutionary structure search confirm the thermodynamic stability and potential synthesis of this triatomic layer. We propose a 2D AlSb-based homojunction field effect transistor that supports three distinct and nonvolatile resistance states, enabling nonvolatile multibit-based integrated nanoelectronics.
NANOSCALE HORIZONS
(2023)
Review
Energy & Fuels
Jose Maurilio Raya-Armenta, Najmeh Bazmohammadi, Juan C. Vasquez, Josep M. Guerrero
Summary: The growing interest in space exploration requires exploring new energy resources and improving the existing energy sources in space environments, especially in terms of photovoltaic systems' efficiency in extreme conditions. Efforts to enhance III-V PV-cell technologies and understand the degradation mechanisms caused by radiation aim to improve the radiation resistance. A chronological review of papers published from the 1990s to the present provides valuable information to guide future research efforts in improving III-V PV technologies for deep space exploration.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2021)
Article
Chemistry, Physical
M. Morales-Gallardo, Jojhar E. Pascoe-Sussoni, Cornelio Delesma, X. Mathew, F. Paraguay-Delgado, Jesus Muniz, N. R. Mathews
Summary: This study successfully synthesized nanoscale grains of Cu3BiS3 and analyzed its material properties, providing a potential method for designing heterojunction solar cells based on CBS by evaluating its structure and electronic properties.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Nanoscience & Nanotechnology
Peng Huang, Manju, Samrana Kazim, Luis Lezama, Rajneesh Misra, Shahzada Ahmad
Summary: The study focused on the design and development of two phenothiazine-based hole transport materials, with PTODAnCBZ showing superior optoelectrical properties and thermal stability. Solar cells fabricated with PTODAnCBZ demonstrated better performance and improved stability under various stress conditions such as moisture, light, and heat.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Applied
Elisabeth L. McClure, Kevin L. Schulte, John Simon, Wondwosen Metaferia, Aaron J. Ptak
APPLIED PHYSICS LETTERS
(2020)
Article
Energy & Fuels
John F. Geisz, Ryan M. France, Kevin L. Schulte, Myles A. Steiner, Andrew G. Norman, Harvey L. Guthrey, Matthew R. Young, Tao Song, Thomas Moriarty
Article
Physics, Applied
Kevin L. Schulte, Ryan M. France, Daniel J. Friedman, Alina D. LaPotin, Asegun Henry, Myles A. Steiner
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Physics, Applied
R. M. France, J. Buencuerpo, M. Bradsby, J. F. Geisz, Y. Sun, P. Dhingra, M. L. Lee, M. A. Steiner
Summary: A graded buffer Bragg reflector (GBBR) is designed and demonstrated for specific metamorphic solar cell applications, offering high reflectivity buffers for quantum well and optically thin solar cells, as well as low sidelobe reflection for multijunction devices. Apodized and triple GBBRs are showcased, with consideration for transparency and carefully engineered material combinations. The GBBRs exhibit high reflectivity and potential for improvement, with applications beyond solar cells to optoelectronic devices like LEDs and lasers.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Wondwosen Metaferia, Anna K. Braun, John Simon, Corinne E. Packard, Aaron J. Ptak, Kevin L. Schulte
Summary: The study reveals that the surface morphology of GaAs grown on vicinal and nominally exact (110) GaAs substrates is strongly influenced by HVPE growth conditions and substrate orientation, with low growth temperatures leading to faceted morphology and high temperatures favoring smooth growth. 3D growth and hillock formation occur on nominally exact substrates, but reducing the group V precursor partial pressure results in smooth morphology. The results are consistent with models involving a negative Ehrlich-Schwoebel step-edge barrier in step-bunching-induced surface faceting.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Energy & Fuels
Dennice M. Roberts, John Simon, Kevin L. Schulte, Matthew Young, Aaron J. Ptak
Summary: The current density of GaInP top cell in HVPE-grown two-junction devices is presently limiting its performance due to unwanted dopant diffusion. In this study, mitigation strategies were implemented to reduce dopant diffusion, resulting in higher short-circuit current density and efficiency improvements in the GaInP/GaAs cell. Despite the thinner unpassivated emitter and increased series resistance, the overall efficiency was increased.
IEEE JOURNAL OF PHOTOVOLTAICS
(2021)
Article
Multidisciplinary Sciences
Alina LaPotin, Kevin L. Schulte, Myles A. Steiner, Kyle Buznitsky, Colin C. Kelsall, Daniel J. Friedman, Eric J. Tervo, Ryan M. France, Michelle R. Young, Andrew Rohskopf, Shomik Verma, Evelyn N. Wang, Asegun Henry
Summary: Thermophotovoltaics (TPVs) convert infrared light into electricity, enabling energy storage and conversion using high temperature heat sources. This study reports the fabrication and measurement of high-efficiency TPV cells, demonstrating the efficiency of high-bandgap tandem TPV cells.
Article
Chemistry, Physical
Ryan M. France, John F. Geisz, Tao Song, Waldo Olavarria, Michelle Young, Alan Kibbler, Myles A. Steiner
Summary: The design of multijunction solar cells takes into account both the theoretical optimal bandgap combination and the realistic limitations of materials. By modifying the bandgap of the middle cell using thick GaInAs/GaAsP strain-balanced quantum well solar cells, a high-efficiency triple-junction inverted metamorphic multijunction device has been achieved.
Article
Energy & Fuels
Jacob T. Boyer, Kevin L. Schulte, Matthew R. Young, Aaron J. Ptak, John Simon
Summary: This study reports the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE). The device performance of AlInP-passivated solar cells was compared with control cells passivated with GaInP. The addition of AlInP passivation improved the current collection and the open-circuit voltage of the solar cells. It is expected that with further optimization, the hydride vapor-phase epitaxy (HVPE)-grown device efficiencies will reach parity with state-of-the-art devices grown by other epitaxial methods.
PROGRESS IN PHOTOVOLTAICS
(2023)
Article
Physics, Applied
Ryan M. France, Jennifer Selvidge, Kunal Mukherjee, Myles A. Steiner
Summary: GaAs is commonly used as a multijunction subcell despite its non-optimal bandgap, thanks to its high material quality. The bandgap can be effectively reduced by using multiple layers of thin, strain-balanced GaInAs in superlattice or quantum well devices. However, achieving excellent carrier collection without increased recombination has proven to be challenging.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Physics, Applied
Allison N. Perna, Kevin L. Schulte, John Simon, Anna K. Braun, David R. Diercks, Corinne E. Packard, Aaron J. Ptak
Summary: This article describes a fully in situ method of fabricating light-scattering structures on III-V materials via vapor phase etching and redeposition, which generates a rough morphology. The addition of PH3 during HCl etching of Ga0.5In0.5P leads to redeposition, and the size of the redeposited features is linearly increased by HCl flow rate and time exposed to HCl-PH3. The resulting Ga-rich GaInP morphologies exhibit high broadband scattering and can enhance the short circuit current density of photovoltaic devices.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Kevin L. Schulte, John Simon, Myles A. Steiner, Aaron J. Ptak
Summary: This study presents an experimental and computational investigation of III-V heterojunction solar cells and explores the impact of emitter doping, emitter band gap, and heteroband offsets on device efficiency. The results suggest that optimizing the choice of emitter band gap, emitter electron affinity, and/or emitter doping density can maximize efficiency.
CELL REPORTS PHYSICAL SCIENCE
(2023)
Proceedings Paper
Energy & Fuels
Kevin L. Schulte, David R. Diercks, Corinne E. Packard, John Simon, Aaron J. Ptak
Summary: The study on GaInAs solar cells showed that Se doping efficiency is extremely high, with intentionally doped samples exhibiting higher open circuit voltage and bandgap voltage offset compared to unintentionally doped samples, indicating potential for future doping optimization improvements in carrier collection and device performance.
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
(2021)
Proceedings Paper
Energy & Fuels
John Simon, Dennice M. Roberts, Jacob Boyer, Kevin L. Schulte, Anna Braun, Allison N. Perna, Aaron J. Ptak
Summary: In this study, solar cells grown using HVPE technology in NREL's dynamic HVPE reactor were demonstrated to achieve high efficiencies, with single junction GaAs and GaInP solar cells reaching efficiencies of 25.5% and 15.2%, respectively, and dual junction solar cells achieving an efficiency of 24.9%.
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
(2021)
Proceedings Paper
Energy & Fuels
Wondwosen Metaferia, Jason Chenenko, Corinne E. Packard, Aaron J. Ptak, Kevin L. Schulte
Summary: Researchers demonstrated the growth of (110) GaAs solar cells by hydride vapor phase epitaxy (HVPE) as a step towards a (110)-oriented device platform with substrate reuse via spalling. They showed that controlled spalling of (110)-oriented substrates eliminates faceting, providing a potential low-cost path for terrestrial III-V photovoltaics.
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
(2021)
