4.7 Article

Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

期刊

NANO-MICRO LETTERS
卷 9, 期 4, 页码 -

出版社

SPRINGER HEIDELBERG
DOI: 10.1007/s40820-017-0153-5

关键词

Large-area growth; Organic single-crystalline nanoribbon arrays; Organic field-effect transistors; Light-emitting diodes driving

资金

  1. National Basic Research Program of China [2013CB933500]
  2. National Natural Science Foundation of China [61422403, 51672180, 51622306, 21673151]
  3. Qing Lan Project
  4. Collaborative Innovation Center of Suzhou Nano Science and Technology (NANO-CIC)
  5. Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)

向作者/读者索取更多资源

Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm(2) V-1 s(-1), demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene (BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm(2) wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm(2) V-1 s(-1) (average mobility 1.2 cm(2) V-1 s(-1)) and 3.0 cm(2) V-1 s(-1) (average mobility 2.0 cm(2) V-1 s(-1)), respectively. They both have a high on/off ratio (I-on/I-off)[10(9). The performance can well satisfy the requirements for light-emitting diodes driving.

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