On a relationship among optical power, current density, and junction temperature for InGaN-based light-emitting diodes
出版年份 2017 全文链接
标题
On a relationship among optical power, current density, and junction temperature for InGaN-based light-emitting diodes
作者
关键词
-
出版物
AIP Advances
Volume 7, Issue 1, Pages 015307
出版商
AIP Publishing
发表日期
2017-01-23
DOI
10.1063/1.4974877
参考文献
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