期刊
RSC ADVANCES
卷 7, 期 37, 页码 22715-22721出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ra02339a
关键词
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资金
- State Key Project of Fundamental research of China [2015CB921402]
- National Natural Science Foundation of China [11374189, 51231007, 11627805]
- 111 Project [B13029]
- China electronics technology group corporation [46, CJ20130304]
Direct evidence of purely interfacial effects on resistance switching is demonstrated in Au/BiFeO3/Nd:SrTiO3(001) (Au/BFO/NSTO) Schottky junctions by reducing the thickness of ferroelectric interlayer BFO. The Au/BFO/NSTO junction shows large current rectification and hysteretic resistive switching behavior without any electroforming process. The conduction mechanism is dominated by interface-limited Fowler-Nordheim (FN) tunneling through a potential barrier formed at the BFO/NSTO interface. Measurements of polarization switching dynamics and capacitance-voltage characteristics provide direct evidence that the resistance switching in the Au/BFO/NSTO junction is ferroelectric and interfacially limited. The observed resistance switching behavior can be attributed to the ferroelectric polarization modulation of the barrier and depletion width of the p-n junction formed at the BFO/NSTO interface.
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