期刊
RSC ADVANCES
卷 7, 期 28, 页码 17387-17397出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra27674a
关键词
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资金
- Natural National Science Foundation of China
- Pakistan Science Foundation Collaborative research project [5161101159]
- Guangdong Talents Project
- NSFC [51373075, 61136003]
- National Basic Research Program of China (973 Program) [2015CB856505, 2015CB93220]
- Natural Science Foundation of Jiangsu Province [BM2012010]
- Shenzhen Peacock Program [KQTD2014062714543296]
- Shenzhen Key Laboratory of Shenzhen Science and Technology Plan [ZDSYS20140509094114164]
During the past few years, two- dimensional (2D) layered materials have emerged as the most fundamental building blocks of a wide variety of optoelectronic devices. The weak van der Waals (vdW) interlayer forces allow the 2D monolayers to isolate and restack into arbitrary stacking heterojunctions. The recently developed chemical vapor deposition (CVD) technique shows great promise for the production of large domain building blocks of 2D heterostructures with vertical and lateral stacking and much better device performance. This review is the first of its kind to discuss the research progress of flexible FETs based on graphene/semiconductor heterostructures, in which graphene acts as both electrode and semiconductor material.
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