Dopant-free multilayer back contact silicon solar cells employing V2Ox/metal/V2Ox as an emitter

In this study, we present novel multilayer back contact (MLBC) solar cells employing V2Ox (8 nm)/metal/V2Ox (8 nm) (VMV) multilayers as dopant-free hole-selective contacts deposited using a thermal evaporation process at low temperature. The optimized V2Ox films have a high work function and reduced Odeficiency in-gap state energy owing to the introduction of a carefully controlled O-2 partial pressure during the evaporation process. The contact resistivities of VMV (12 nm Ag) and VMV (4 nm Au) contacts with n-Si are 1.58 m Omega cm(2) and 0.04 mU cm(2), respectively, which are less than that of a 16 nm V2Ox/n-Si contact. Interestingly, VMV (Au)/n-Si MLBC solar cells demonstrate improved charge carrier transport, leading to an induced p-n junction. Moreover, the dominant interfacial charge carrier transport properties of MLBC solar cells with VMV (Ag)/n-Si and VMV (Au)/n-Si contacts correspond with the diffusion-recombination model, whereas, those of MLBC solar cells with V2Ox/n-Si and VMV (Ca)/n-Si contacts correspond with the multitunneling capture emission model at a high-forward-bias voltage. The use of VMV (4 nm Au) as an emitter achieves an efficiency of 19.02% for this type of MLBC solar cell, which is greater than that of V2Ox/n-Si solar cells (17.58%). This work has important implications for enabling the fabrication of low-performance dopant-free back contact solar cells with high stability using a simple fabrication process.