Optical charge state control of spin defects in 4H-SiC

Optical switching of defect charge states in 4H-SiC

(2017) D. A. Golter et al.   Scientific Reports

Long-term data storage in diamond

(2016) S. Dhomkar et al.   Science Advances

Defects as qubits in3C−and4H−SiC

(2015) L. Gordon et al.   PHYSICAL REVIEW B

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

(2015) F. Fuchs et al.   Nature Communications

Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond

(2015) Xiangdong Chen et al.   Light-Science & Applications

Quantum error correction in a solid-state hybrid spin register

(2014) G. Waldherr et al.   NATURE

Isolated electron spins in silicon carbide with millisecond coherence times

(2014) David J. Christle et al.   NATURE MATERIALS

Coherent control of single spins in silicon carbide at room temperature

(2014) Matthias Widmann et al.   NATURE MATERIALS

Nanometre-scale thermometry in a living cell

(2013) G. Kucsko et al.   NATURE

Room-temperature quantum microwave emitters based on spin defects in silicon carbide

(2013) H. Kraus et al.   Nature Physics

Photo-induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single-shot charge state detection

(2013) N Aslam et al.   NEW JOURNAL OF PHYSICS

Optically Controlled Switching of the Charge State of a Single Nitrogen-Vacancy Center in Diamond at Cryogenic Temperatures

(2013) P. Siyushev et al.   PHYSICAL REVIEW LETTERS

Fluorescence thermometry enhanced by the quantum coherence of single spins in diamond

(2013) D. M. Toyli et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

High Purity Semi-Insulating 4H-SiC Epitaxial Layers by Defect-Competition Epitaxy: Controlling Si Vacancies

(2012) M. V. S. Chandrashekhar et al.   Applied Physics Express

Excitation spectrum of point defects in semiconductors studied by time-dependent density functional theory

(2012) Adam Gali   JOURNAL OF MATERIALS RESEARCH

Negative-USystem of Carbon Vacancy in4H-SiC

(2012) N. T. Son et al.   PHYSICAL REVIEW LETTERS

Defects in SiC for quantum computing

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

Room temperature coherent control of defect spin qubits in silicon carbide

(2011) William F. Koehl et al.   NATURE

Electron spin coherence exceeding seconds in high-purity silicon

(2011) Alexei M. Tyryshkin et al.   NATURE MATERIALS

Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy

(2011) Pavel G. Baranov et al.   PHYSICAL REVIEW B

Electrical Tuning of Single Nitrogen-Vacancy Center Optical Transitions Enhanced by Photoinduced Fields

(2011) L. C. Bassett et al.   PHYSICAL REVIEW LETTERS

Conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers through selective oxidation

(2010) K.-M. C. Fu et al.   APPLIED PHYSICS LETTERS

Metastable Dark States Enable Ground State Depletion Microscopy of Nitrogen Vacancy Centers in Diamond with Diffraction-Unlimited Resolution

(2010) Kyu Young Han et al.   NANO LETTERS

Single-shot readout of an electron spin in silicon

(2010) Andrea Morello et al.   NATURE

The silicon vacancy in SiC

(2009) Erik Janzén et al.   PHYSICA B-CONDENSED MATTER

Nanoscale magnetic sensing with an individual electronic spin in diamond

(2008) J. R. Maze et al.   NATURE

EPR identification of intrinsic defects in SiC

(2008) J. Isoya et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS