期刊
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
卷 643, 期 21, 页码 1312-1322出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/zaac.201700270
关键词
Silicon carbide; Gallium nitride; Gallium oxide; Diamond; Energy applications
资金
- Deutsche Forschungsgemeinschaft
- STAEDTLER-Stiftung
- Bundesministerium fur Bildung und Forschung
- European Commission under the framework of Horizon 2020
Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.
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