Enhanced performance of quantum dots light-emitting diodes: The case of Al 2 O 3 electron blocking layer

标题
Enhanced performance of quantum dots light-emitting diodes: The case of Al 2 O 3 electron blocking layer
作者
关键词
Atomic layer deposition (ALD), Electron blocking layer (EBL), Aluminum oxide (Al, 2, O, 3, ) thin film, Quantum dots light-emitting diodes (QLEDs)
出版物
VACUUM
Volume 137, Issue -, Pages 38-41
出版商
Elsevier BV
发表日期
2016-12-14
DOI
10.1016/j.vacuum.2016.12.017

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