Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor

标题
Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor
作者
关键词
2D material, NEGF, Junctionless FET, Quantum ballistic simulation, Short channel effects, Debye -screening, Potentiometric biosensor
出版物
SUPERLATTICES AND MICROSTRUCTURES
Volume 111, Issue -, Pages 414-422
出版商
Elsevier BV
发表日期
2017-06-25
DOI
10.1016/j.spmi.2017.06.055

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