Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

标题
Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs
作者
关键词
Germanium, Junctionless, FinFETs, 3D TCAD simulation, Quantum confinement effects
出版物
SUPERLATTICES AND MICROSTRUCTURES
Volume 111, Issue -, Pages 649-655
出版商
Elsevier BV
发表日期
2017-07-08
DOI
10.1016/j.spmi.2017.07.020

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