期刊
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
卷 184, 期 -, 页码 151-162出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.saa.2017.04.082
关键词
SnS nanostructures; Optical properties; Indium doping; Electrodeposition; Thin films; Absorber layer
类别
资金
- Islamic Azad University, Ahvaz Branch
SnS:In thin films were grown on fluorine doped tin oxide (FTO) substrate by cathodic electrodeposition technique. The solution was containing 2 mM SnCl2 and 16 mM Na2S2O3 and different amounts of 1 mM InCl3 as In-dopant. The pH, bath temperature, deposition time, and deposition potential (E) were fixed at 2.1, 60 degrees C, 30 min, and -1 V, respectively. The XRD results showed that the synthesized films were polycrystalline orthorhombic SnS. The XPS results demonstrated that the films were composed of Sn, S and In. According to the FESEM images, an increase in In-dopant concentration leads to a change in morphology from grain-like to sheet-like having a nanoscale thickness of 20-80 nm and fiber-like. The PL spectra of undoped SnS exhibited four emission peaks including a UV peak, two blue emission peaks, and an IR emission peak. According to the UV-Vis spectra, the direct band gap of SnS:In thin films was estimated to be 1.40-1.66 eV. (C) 2017 Elsevier B.V. All rights reserved.
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