期刊
SOLID-STATE ELECTRONICS
卷 134, 期 -, 页码 19-21出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2017.05.006
关键词
Room-temperature fabrication; Ga-Sn-O (GTO); Thin-film transistor (TFT); Radio-frequency (RF) magnetron sputtering; Rare-metal free; Amorphous metal-oxide semiconductor (AOS)
资金
- KAKENHI [16K06733]
- JFE 21st Century Foundation
- Kansai Research Foundation for Technology Promotion
- Collaborative Research Project of Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology
- Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- Innovative Materials and Processing Research Center for private universities from MEXT
- research project of the Joint Re-search Center for Science and Technology at Ryukoku University
- Grants-in-Aid for Scientific Research [16K06733] Funding Source: KAKEN
We have succeeded in forming a Ga-Sn-O (GTO) film for a thin-film transistor (TFT) using radio-frequency (RF) magnetron sputtering at room temperature without annealing process. It is achieved that the field-effect mobility is 0.83, cm(2) V-1 s(-1) and the on/off ratio is roughly 10(6). A critical process parameter is the deposition pressure during the RF magnetron sputtering, which determines a balance between competing mechanisms of sputtering damages and chemical reactions, because the film quality has to be enhanced solely during the sputtering deposition. This result suggests a possibility of rare-metal free amorphous metal-oxide semiconductors. (C) 2017 Elsevier Ltd. All rights reserved.
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