n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation

标题
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
作者
关键词
Silicon solar cells, Passivating contacts, Device simulation, Power loss analysis, Impurity recombination
出版物
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 173, Issue -, Pages 96-105
出版商
Elsevier BV
发表日期
2017-05-24
DOI
10.1016/j.solmat.2017.05.042

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