期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 159, 期 -, 页码 272-281出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2016.09.023
关键词
Thin film solar cells; Cu(In,Ga)Se-2 (CIGS); Buffer layers; CdS; Zn1-xSnxOy
资金
- EU through the FP7 Marie Curie IEF Action [327367]
- Swedish Energy Agency [2012-004591]
- Sweden's innovation agency VINNOVA [2013-02199]
- STandUP
- CAPES [CAPES-INL 04/14]
- CNPq
- FAPEMIG
- Fundacao para a Ciencia e a Tecnologia (Portugal) [RECI/FIS-NAN/0183/2012 (COMPETE: FCOMP-01-0124-FEDER-027494), UID/CTM/50025/2013]
- Fundação para a Ciência e a Tecnologia [RECI/FIS-NAN/0183/2012] Funding Source: FCT
- Vinnova [2013-02199] Funding Source: Vinnova
Thin film solar cells based on Cu(In,Ga)Se-2 (CIGS), where just the buffer layer is changed, were fabricated and studied. The effects of two different buffer layers, CdS and Zn1-xSnxOy (ZnSnO), are compared using several characterization techniques. We compared both devices and observe that the ZnSnO-based solar cells have similar values of power conversion efficiency as compared to the cells with CdS buffer layers. The ZnSnO-based devices have higher values in the short-circuit current (6) that compensate for lower values in fill factor (FF) and open circuit voltage (V-oc) than CdS based devices. Kelvin probe force microscopy (KPFM) results indicate that CdS provides junctions with slightly higher surface photovoltage (SPV) than ZnSnO, thus explaining the lower Voc potential for the ZnSnO sample. The TEM analysis shows a poly-crystalline ZnSnO layer and we have not detected any strong evidence of diffusion of Zn or Sn into the CIGS. From the photoluminescence measurements, we concluded that both samples are being affected by fluctuating potentials, although this effect is higher for the CdS sample. (C) 2016 Elsevier B.V. All rights reserved.
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