4.7 Article

Sintering temperature dependence of thermoelectric performance in CuCrSe2 prepared via mechanical alloying

期刊

SCRIPTA MATERIALIA
卷 127, 期 -, 页码 127-131

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2016.09.016

关键词

CuCrSe2; Single phase; Layered structure; PLEC

资金

  1. National Natural Science Foundation of China [11404044, 51472036, 11344010]
  2. 100 Talent Program of the Chinese Academy of Sciences [2013-46]

向作者/读者索取更多资源

CuCrSe2 compounds were synthesized by mechanical alloying followed by annealing and spark plasma sintering at temperatures of 873 K, 923 K, 973 K and 1023 K. Our investigation revealed that high SPS temperature (above 973 K) is the key to obtaining CuCrSe2 single phase completely free of a metallic secondary phase CuCr2Se4. The ultralow thermal conductivity caused by the Cu ions disorder, complex layered structure and dislocation leads to the favorable thermoelectric performance in CuCrSe2 compound. A maximum ZT value over 0.75@873 K is achieved in the absolutely pure sample sintered at 1023 K. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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